公开(公告)号：US20180005792A1

公开(公告)日：2018-01-04

申请号：US15392539

申请日：2016-12-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Fiumara ,  Marcello Frazzica ,  Giuseppe Digrazia

IPC: H01J19/24 ,  H01J9/02 ,  H01J19/44

CPC classification number: H01J19/24 ,  H01J9/025 ,  H01J19/44 ,  H01J19/82 ,  H01J21/105 ,  H01J2209/0223

Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.

公开(公告)号：US10102996B2

公开(公告)日：2018-10-16

申请号：US15392539

申请日：2016-12-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Fiumara ,  Marcello Frazzica ,  Giuseppe Digrazia

IPC: H01L29/06 ,  H01L29/12 ,  H01L21/00 ,  H01J19/24 ,  H01J19/44 ,  H01J9/02

Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.