公开(公告)号：US20180005792A1

公开(公告)日：2018-01-04

申请号：US15392539

申请日：2016-12-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Fiumara ,  Marcello Frazzica ,  Giuseppe Digrazia

IPC: H01J19/24 ,  H01J9/02 ,  H01J19/44

CPC classification number: H01J19/24 ,  H01J9/025 ,  H01J19/44 ,  H01J19/82 ,  H01J21/105 ,  H01J2209/0223

Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.

公开(公告)号：US09553209B2

公开(公告)日：2017-01-24

申请号：US14856148

申请日：2015-09-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Fiumara

IPC: H01L21/00 ,  H01L29/06 ,  H01L29/861 ,  H01J9/02 ,  H01J21/10 ,  H01J19/24 ,  H01J21/04 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/66

CPC classification number: H01L29/861 ,  H01J9/025 ,  H01J19/24 ,  H01J21/04 ,  H01J21/105 ,  H01L21/3065 ,  H01L21/3081 ,  H01L29/6609

Abstract: The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

Abstract translation: 该方法基于以下步骤：在包括衬底和至少一个绝缘层的主体中形成沟槽; 以及在所述主体上方沉积金属层以封闭所述沟槽的开放端或口。 沟槽通过选择性地蚀刻身体形成，其中反应副产物沉积在沟槽的壁上并且沿着沟槽的壁形成钝化层，并且在沟槽的口附近形成限制元件。

公开(公告)号：US10102996B2

公开(公告)日：2018-10-16

申请号：US15392539

申请日：2016-12-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonino Fiumara ,  Marcello Frazzica ,  Giuseppe Digrazia

IPC: H01L29/06 ,  H01L29/12 ,  H01L21/00 ,  H01J19/24 ,  H01J19/44 ,  H01J9/02

Abstract: A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.