公开(公告)号：US20160087082A1

公开(公告)日：2016-03-24

申请号：US14954635

申请日：2015-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore CASCINO ,  Leonardo GERVASI ,  Antonello SANTANGELO

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

公开(公告)号：US20190128830A1

公开(公告)日：2019-05-02

申请号：US16171151

申请日：2018-10-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra ALBERTI ,  Lucio RENNA ,  Leonardo GERVASI ,  Emanuele SMECCA ,  Salvatore SANZARO ,  Clelia Carmen GALATI ,  Antonello SANTANGELO ,  Antonino LA MAGNA

IPC: G01N27/12 ,  B81B3/00 ,  B81C1/00

Abstract: Gas sensor, comprising: a substrate of semiconductor material; a first working electrode on the substrate; a second working electrode on the substrate, at a distance from the first working electrode; an interconnection layer extending in electrical contact with the first and the second working electrode, configured to change its conductivity when reacting with gas species to be detected. The interconnection layer is of titanium oxide, has a porosity between 40% and 60% in volume and is formed by a plurality of meso-pores having at least one dimension in the range 6-30 nm connected to nano-pores having at least one respective dimension in the range 1-5 nm.