公开(公告)号：US20250015155A1

公开(公告)日：2025-01-09

申请号：US18764893

申请日：2024-07-05

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Mario Giuseppe SAGGIO

IPC: H01L29/423 ,  H01L27/06 ,  H01L29/16 ,  H01L29/872

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US20220208977A1

公开(公告)日：2022-06-30

申请号：US17698986

申请日：2022-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Mario Giuseppe SAGGIO

IPC: H01L29/423 ,  H01L27/06 ,  H01L29/16 ,  H01L29/872

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US20240079455A1

公开(公告)日：2024-03-07

申请号：US18364180

申请日：2023-08-02

Applicant: STMicroelectronics S.r.l.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/16 ,  H01L29/51 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/511 ,  H01L29/66068 ,  H01L29/872

Abstract: Electronic device comprising: a semiconductor body, in particular of Silicon Carbide, SiC, having a first and a second face, opposite to each other along a first direction; and an electrical terminal at the first face, insulated from the semiconductor body by an electrical insulation region. The electrical insulation region is a multilayer comprising: a first insulating layer, of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer on the first insulating layer, of a Hafnium Oxide; and a third insulating layer on the second insulating layer, of an Aluminum Oxide.

公开(公告)号：US20220208961A1

公开(公告)日：2022-06-30

申请号：US17559859

申请日：2021-12-22

Applicant: STMicroelectronics S.r.l.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/66

Abstract: A MOSFET transistor device includes a functional layer of silicon carbide, having a first conductivity type. Gate structures are formed on a top surface of the functional layer and each includes a dielectric region and an electrode region. Body wells having a second conductivity type are formed within the functional layer, and the body wells are separated from one another by surface-separation regions. Source regions having the first conductivity type are formed within the body wells, laterally and partially underneath respective gate structures. Modified-doping regions are arranged in the surface-separation regions centrally thereto, underneath respective gate structures, in particular underneath the corresponding dielectric regions, and have a modified concentration of dopant as compared to the concentration of the functional layer.

公开(公告)号：US20200373398A1

公开(公告)日：2020-11-26

申请号：US16882293

申请日：2020-05-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Mario Giuseppe SAGGIO

IPC: H01L29/423 ,  H01L29/872 ,  H01L29/16 ,  H01L27/06

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.