公开(公告)号：US20230062980A1

公开(公告)日：2023-03-02

申请号：US17821711

申请日：2022-08-23

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Delfo Nunziato SANFILIPPO ,  Piero FALLICA

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/18 ,  G01S7/4863

Abstract: The present disclosure is directed to an opto-electronic device of semiconductor material formed in a semiconductor layer of a first conductivity type having a thickness and accommodating at least one deep region of a second conductivity type. The deep region forms a PN junction with the semiconductor layer. The deep region has a depth greater than the width. The deep region is formed by a bottom portion contiguous to a first layer portion of the semiconductor layer; a surface portion contiguous to a second layer portion of the semiconductor layer; and an intermediate portion contiguous to a third layer portion. The concentration of the third layer portion is greater than that of the first and second layer portions.

公开(公告)号：US20200305778A1

公开(公告)日：2020-10-01

申请号：US16824374

申请日：2020-03-19

Applicant: STMicroelectronics S.r.l.

Inventor： Vincenzo VINCIGUERRA ,  Piero FALLICA ,  Mario Francesco ROMEO

IPC: A61B5/1455 ,  A61B5/00 ,  A61B5/0478 ,  A61B5/0245

Abstract: A probe device includes an optical device including at least one of a photodetector or a first light source. A cover structure is included and is arranged in front of the optical device. The cover structure includes an electrode which contacts, in use, a body tissue.

公开(公告)号：US20180138327A1

公开(公告)日：2018-05-17

申请号：US15868929

申请日：2018-01-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Salvatore LOMBARDO

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44 ,  H01L27/144

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20190148568A1

公开(公告)日：2019-05-16

申请号：US16228483

申请日：2018-12-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Salvatore LOMBARDO

IPC: H01L31/0216 ,  H01L27/146 ,  H01L31/107 ,  H01L27/144 ,  G01J1/44 ,  H01L31/02

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20180284299A1

公开(公告)日：2018-10-04

申请号：US15939096

申请日：2018-03-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo CREMA ,  Alessandro FREGUGLIA ,  Piero FALLICA

IPC: G01T1/208 ,  G01T1/20 ,  G01T1/202 ,  H01L31/0203

CPC classification number: G01T1/208 ,  G01T1/2002 ,  G01T1/2018 ,  G01T1/202 ,  G01T7/00 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/085 ,  H01L31/107

Abstract: A radiation scintillator detector comprising a substrate on which are arranged a scintillator module and a silicon photomultiplier optically coupled one to the other. The detector includes a package comprising an outer casing enclosing said scintillator module and said photomultiplier, said package comprising inside said outer casing an inner casing comprising resin reflecting photons, in particular infrared and/or visible photons, emitted by said scintillator module upon receiving a ionizing radiation, enclosing said scintillator module and said photomultiplier.

公开(公告)号：US20230309869A1

公开(公告)日：2023-10-05

申请号：US18331067

申请日：2023-06-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Vincenzo VINCIGUERRA ,  Piero FALLICA ,  Mario Francesco ROMEO

IPC: A61B5/1455 ,  A61B5/0245 ,  A61B5/00 ,  A61B5/291 ,  A61B5/026 ,  A61B5/268

CPC classification number: A61B5/14552 ,  A61B5/0245 ,  A61B5/6803 ,  A61B5/6848 ,  A61B5/291 ,  A61B5/0261 ,  A61B5/268

Abstract: A probe device includes an optical device including at least one of a photodetector or a first light source. A cover structure is included and is arranged in front of the optical device. The cover structure includes an electrode which contacts, in use, a body tissue.

公开(公告)号：US20180333060A1

公开(公告)日：2018-11-22

申请号：US15976658

申请日：2018-05-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Sebania LIBERTINO

IPC: A61B5/021 ,  A61B5/024 ,  A61B5/00 ,  G02F1/21

CPC classification number: A61B5/02125 ,  A61B5/021 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/742 ,  A61B2562/0238 ,  G02F1/21 ,  G02F2001/213 ,  G02F2203/055 ,  G02F2203/11

Abstract: In various embodiments, the present disclosure provides devices and systems for detecting the blood pressure of a user. In one embodiment, an optoelectronic device includes an array of avalanche photodiodes operating in Geiger mode. A tunable optical filter is optically coupled to the array and receives a light beam reflected from a vascularized tissue of the user, in response to the vascularized tissue being illuminated by an optical source.