公开(公告)号：US20230299173A1

公开(公告)日：2023-09-21

申请号：US18180680

申请日：2023-03-08

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/872 ,  H01L29/868 ,  H01L21/04 ,  H01L21/268 ,  H01L21/263 ,  H01L29/40

CPC classification number: H01L29/6606 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/868 ,  H01L29/872

Abstract: Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

公开(公告)号：US20230299148A1

公开(公告)日：2023-09-21

申请号：US18183866

申请日：2023-03-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/872 ,  H01L29/66143 ,  H01L29/45

Abstract: A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.