公开(公告)号：US20220013681A1

公开(公告)日：2022-01-13

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20210257507A1

公开(公告)日：2021-08-19

申请号：US17308651

申请日：2021-05-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US20190280146A1

公开(公告)日：2019-09-12

申请号：US16294645

申请日：2019-03-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/18

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20190280144A1

公开(公告)日：2019-09-12

申请号：US16292525

申请日：2019-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  G02B6/12 ,  H01L31/0232

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.