公开(公告)号：US20220091330A1

公开(公告)日：2022-03-24

申请号：US17540626

申请日：2021-12-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20220013681A1

公开(公告)日：2022-01-13

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20210257507A1

公开(公告)日：2021-08-19

申请号：US17308651

申请日：2021-05-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US20200241201A1

公开(公告)日：2020-07-30

申请号：US16847189

申请日：2020-04-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/30 ,  G02B6/27 ,  G02B6/126 ,  G02B6/122

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20200233164A1

公开(公告)日：2020-07-23

申请号：US16748696

申请日：2020-01-21

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois CARPENTIER ,  Charles BAUDOT

IPC: G02B6/43 ,  G02B6/12 ,  G02B6/13

Abstract: A photonic system includes a first photonic circuit having a first face and a second photonic circuit having a second face. The first photonic circuit comprises first wave guides, and, for each first wave guide, a second wave guide covering the first wave guide, the second wave guides being in contact with the first face and placed between the first face and the second face, the first wave guides being located on the side of the first face opposite the second wave guides. The second photonic circuit comprises, for each second wave guide, a third wave guide covering the second wave guide. The first photonic circuit comprises first positioning devices projecting from the first face and the second photonic circuit comprises second positioning devices projecting from the second face, at least one of the first positioning devices abutting one of the second positioning devices in a first direction.

公开(公告)号：US20170184797A1

公开(公告)日：2017-06-29

申请号：US14982302

申请日：2015-12-29

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles BAUDOT

IPC: G02B6/34 ,  G02B6/124 ,  G02B5/18 ,  G02B6/30

CPC classification number: G02B6/34 ,  G02B5/1857 ,  G02B5/1866 ,  G02B6/124 ,  G02B6/30 ,  G02B2006/12061

Abstract: An electro-optic device may include a photonic chip including an insulator layer, and a semiconductor layer over the insulator layer and defining an optical grating coupler. The optical grating coupler may have a series of alternating curved ridges and valleys. The optical grating coupler has first and second sides and a medial portion. The medial portion has a medial grating period T based upon a targeting wavelength. One or more of the first and second sides have a side grating period different than T.

公开(公告)号：US20190285802A1

公开(公告)日：2019-09-19

申请号：US16295553

申请日：2019-03-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain GUERBER ,  Charles BAUDOT

IPC: G02B6/24 ,  G02B6/42 ,  G02B6/122

Abstract: An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.

公开(公告)号：US20190280146A1

公开(公告)日：2019-09-12

申请号：US16294645

申请日：2019-03-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/18

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20190280144A1

公开(公告)日：2019-09-12

申请号：US16292525

申请日：2019-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  G02B6/12 ,  H01L31/0232

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US20170307468A1

公开(公告)日：2017-10-26

申请号：US15133614

申请日：2016-04-20

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois CARPENTIER ,  Patrick LEMAITRE ,  Jean-Robert MANOUVRIER ,  Charles BAUDOT ,  Bertrand BOROT

IPC: G01M11/02 ,  G02B6/12 ,  G02B6/28 ,  G02B6/34

CPC classification number: G01M11/02 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.