公开(公告)号：US20210050224A1

公开(公告)日：2021-02-18

申请号：US16990556

申请日：2020-08-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Joel SCHMITT ,  Bilel SAIDI ,  Sylvain JOBLOT

IPC: H01L21/3205 ,  H01L23/528 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3215

Abstract: An electrode is included in a base substrate. A trench is produced in the base substrate. The trench is filled with an annealed amorphous material to form the electrode. The electrode is made of a crystallized material which includes particles that are implanted into a portion of the electrode that is located adjacent the front-face side of the base substrate.

公开(公告)号：US20230326947A1

公开(公告)日：2023-10-12

申请号：US18131543

申请日：2023-04-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Magali GREGOIRE ,  Joel SCHMITT

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1469 ,  H01L27/14636

Abstract: An integrated circuit includes at least one silicon region and at least one metal pillar in contact with the at least one silicon region at an ohmic coupling region. The at least one metal pillar is formed by: depositing a layer of titanium on the at least one silicon region; depositing atomic layers of titanium nitride on the layer of titanium; and annealing at a temperature of between 715° C. and 815° C. for a period of between 5 seconds and 30 seconds. This forms a titanium silicide for the ohmic coupling region in a volume having the appearance of a spherical cap or segment.