公开(公告)号：US20240204029A1

公开(公告)日：2024-06-20

申请号：US18536511

申请日：2023-12-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Magali GREGOIRE ,  Bilel SAIDI ,  Sylvain JOBLOT ,  Benjamin VIANNE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/14683

Abstract: An image sensor includes photodetection pixels formed inside and on top of a semiconductor substrate. An interconnection network coats a surface of the semiconductor substrate. The interconnection network includes a level of conductive vias in contact, by their lower surface, with the photodetection pixels. The conductive vias are made of doped polysilicon and have a heavier doping on their lower surface side than on their upper surface side.

公开(公告)号：US20210050224A1

公开(公告)日：2021-02-18

申请号：US16990556

申请日：2020-08-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Joel SCHMITT ,  Bilel SAIDI ,  Sylvain JOBLOT

IPC: H01L21/3205 ,  H01L23/528 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3215

Abstract: An electrode is included in a base substrate. A trench is produced in the base substrate. The trench is filled with an annealed amorphous material to form the electrode. The electrode is made of a crystallized material which includes particles that are implanted into a portion of the electrode that is located adjacent the front-face side of the base substrate.