公开(公告)号：US20240204029A1

公开(公告)日：2024-06-20

申请号：US18536511

申请日：2023-12-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Magali GREGOIRE ,  Bilel SAIDI ,  Sylvain JOBLOT ,  Benjamin VIANNE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/14683

Abstract: An image sensor includes photodetection pixels formed inside and on top of a semiconductor substrate. An interconnection network coats a surface of the semiconductor substrate. The interconnection network includes a level of conductive vias in contact, by their lower surface, with the photodetection pixels. The conductive vias are made of doped polysilicon and have a heavier doping on their lower surface side than on their upper surface side.

公开(公告)号：US20200381297A1

公开(公告)日：2020-12-03

申请号：US16881689

申请日：2020-05-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Magali GREGOIRE

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522

Abstract: An interconnection element of an interconnection structure of an integrated circuit is manufactures by a method where a cavity is etched in an insulating layer. A silicon nitride layer is then deposited on walls and a bottom of the cavity. The nitrogen atom concentration in the silicon nitride layer increasing as a distance from an exposed surface of the silicon nitride layer increases. A copper layer is deposited on the silicon nitride layer. The cavity is further filled with copper. A heating process is performed after the deposition of the copper layer, to convert the copper layer and the silicon nitride layer to form a copper silicide layer which has a nitrogen atom concentration gradient corresponding to the gradient of the silicon nitride layer.

公开(公告)号：US20230170260A1

公开(公告)日：2023-06-01

申请号：US18102316

申请日：2023-01-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Magali GREGOIRE

IPC: H01L21/8234 ,  H01L21/265 ,  H01L21/285 ,  H01L21/324

CPC classification number: H01L21/823418 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/324

Abstract: An integrated circuit includes first semiconductor regions each having a silicided portion with group-III, group-IV, and/or group-V atoms implanted therein. In each first semiconductor region, a concentration of the group-III, group-IV, and/or group-V atoms is maximum at an interface between the silicided portion and a non-silicided portion. Other semiconductor regions in the integrated circuit each include a silicided portion also having group-III, group-IV, and/or group-V atoms implanted therein. The silicided portions of the first semiconductor regions are thicker than the silicided portions of the other semiconductor regions. The group-III, group-IV, and/or group-V atoms of the first semiconductor regions and of the other semiconductor regions may be carbon and/or germanium atoms.

公开(公告)号：US20230326947A1

公开(公告)日：2023-10-12

申请号：US18131543

申请日：2023-04-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Magali GREGOIRE ,  Joel SCHMITT

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1469 ,  H01L27/14636

Abstract: An integrated circuit includes at least one silicon region and at least one metal pillar in contact with the at least one silicon region at an ohmic coupling region. The at least one metal pillar is formed by: depositing a layer of titanium on the at least one silicon region; depositing atomic layers of titanium nitride on the layer of titanium; and annealing at a temperature of between 715° C. and 815° C. for a period of between 5 seconds and 30 seconds. This forms a titanium silicide for the ohmic coupling region in a volume having the appearance of a spherical cap or segment.

公开(公告)号：US20220020640A1

公开(公告)日：2022-01-20

申请号：US17488714

申请日：2021-09-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Magali GREGOIRE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: An interconnection element of an interconnection structure of an integrated circuit is manufactures by a method where a cavity is etched in an insulating layer. A silicon nitride layer is then deposited on walls and a bottom of the cavity. The nitrogen atom concentration in the silicon nitride layer increasing as a distance from an exposed surface of the silicon nitride layer increases. A copper layer is deposited on the silicon nitride layer. The cavity is further filled with copper. A heating process is performed after the deposition of the copper layer, to convert the copper layer and the silicon nitride layer to form a copper silicide layer which has a nitrogen atom concentration gradient corresponding to the gradient of the silicon nitride layer.