公开(公告)号：US20150035106A1

公开(公告)日：2015-02-05

申请号：US14446804

申请日：2014-07-30

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Jean-Pierre Carrere ,  Patrick Gros D'Aillon ,  Stephane Allegret-Maret ,  Jean-Pierre Oddou

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Abstract translation: 集成电路包括由支撑至少一个像素的衬底形成的背面照明图像传感器，位于衬底前侧之上的互连部分和位于衬底背面上方的抗反射层。 抗反射层可以由氮化硅层形成。 附加层位于抗反射层上方。 附加层由非晶氮化硅或氢化非晶氮化硅之一形成，其中每立方厘米的硅原子数与每立方厘米的氮原子数之比大于0.7。

公开(公告)号：US12256590B2

公开(公告)日：2025-03-18

申请号：US17543004

申请日：2021-12-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thierry Berger ,  Stephane Allegret-Maret

IPC: H01L23/14 ,  H10K30/35 ,  H10K30/82 ,  H10K30/87 ,  H10K39/32

Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

公开(公告)号：US09685475B2

公开(公告)日：2017-06-20

申请号：US14847391

申请日：2015-09-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Jean-Pierre Oddou ,  Stephane Allegret-Maret ,  Mickael Gros-Jean

IPC: H01L31/18 ,  H01L31/0232 ,  H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464

Abstract: A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

公开(公告)号：US09224775B2

公开(公告)日：2015-12-29

申请号：US14446804

申请日：2014-07-30

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Jean-Pierre Carrere ,  Patrick Gros D'Aillon ,  Stephane Allegret-Maret ,  Jean-Pierre Oddou

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Abstract translation: 集成电路包括由支撑至少一个像素的衬底形成的背面照明图像传感器，位于衬底前侧之上的互连部分和位于衬底背面上方的抗反射层。 抗反射层可以由氮化硅层形成。 附加层位于抗反射层上方。 附加层由非晶氮化硅或氢化非晶氮化硅之一形成，其中每立方厘米的硅原子数与每立方厘米的氮原子数之比大于0.7。

公开(公告)号：US20160099278A1

公开(公告)日：2016-04-07

申请号：US14847391

申请日：2015-09-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Jean-Pierre Oddou ,  Stephane Allegret-Maret ,  Mickael Gros-Jean

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464

Abstract: A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

Abstract translation: 背照式集成成像装置由包括由电容深沟槽隔离限制的像素区域的半导体衬底形成。 外围区域位于像素区域之外。 连续导电层在像素区域中形成用于每个电容深沟槽隔离的沟槽中的电极，并且在周边区域中形成用于将电极电耦合到偏置接触焊盘的再分布层。 电极位于沟槽电介质和用于填充沟槽的至少一种材料之间的沟槽中。