公开(公告)号：US11552116B2

公开(公告)日：2023-01-10

申请号：US17011900

申请日：2020-09-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thomas Dalleau

IPC: H04N5/3745 ,  H01L27/146

Abstract: A pixel includes a photodiode and first and second transistors, the first and second transistors being coupled in series. One of the first and second transistors is a P channel transistor and the other is an N channel transistor. An electronic device may include one or more of the pixels.

公开(公告)号：US11736826B2

公开(公告)日：2023-08-22

申请号：US16912609

申请日：2020-06-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Thomas Dalleau

IPC: H04N25/57 ,  H01L27/146 ,  H04N25/76 ,  H04N25/77 ,  H04N25/709

CPC classification number: H04N25/57 ,  H01L27/14616 ,  H04N25/76 ,  H04N25/77

Abstract: A pixel includes: a detection node; a first normally on transistor connected between the detection node and a rail for applying a first potential; and a second transistor whose gate is connected to the detection node. An image sensor includes a plurality of the pixels and a control circuit configured to apply, during for a phase of initializing the detection node, the first potential to the gate of the first transistor.

公开(公告)号：US12075178B2

公开(公告)日：2024-08-27

申请号：US17986505

申请日：2022-11-14

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Thomas Dalleau

IPC: H04N25/77 ,  H04N25/75

CPC classification number: H04N25/77 ,  H04N25/75

Abstract: An image sensor includes a pixel array where each pixel is formed in a portion of a substrate electrically insulated from other portions of the substrate. Each pixel includes a photodetector; a transfer transistor; and a readout circuit comprising one or a plurality of transistors. The transistors of the readout circuit are formed inside and on top of at least one well of the portion. The reading from the photodetector of a pixel of a current row uses at least one transistor of the readout circuit of a pixel of at least one previous row, the well of the pixel of the previous row being biased with a first voltage greater than a second bias voltage of the well of the pixel of the current row.