公开(公告)号：US12096139B2

公开(公告)日：2024-09-17

申请号：US18137563

申请日：2023-04-21

申请人： Contrast, Inc.

发明人： Willie C. Kiser ,  Nora Tocci ,  Michael D. Tocci

IPC分类号： H04N25/57 ,  G02B27/10 ,  G02B27/14 ,  H04N9/64 ,  H04N9/76 ,  H04N23/13 ,  H04N23/45 ,  H04N23/54 ,  H04N23/55 ,  H04N23/57 ,  H04N23/741 ,  H04N23/50

CPC分类号： H04N25/57 ,  G02B27/106 ,  G02B27/1066 ,  G02B27/108 ,  G02B27/145 ,  H04N9/646 ,  H04N9/76 ,  H04N23/13 ,  H04N23/45 ,  H04N23/54 ,  H04N23/55 ,  H04N23/57 ,  H04N23/741 ,  H04N23/50

摘要： The invention is relates to systems and methods for high dynamic range (HDR) image capture and video processing in mobile devices. Aspects of the invention include a mobile device, such as a smartphone or digital mobile camera, including at least two image sensors fixed in a co-planar arrangement to a substrate and an optical splitting system configured to reflect at least about 90% of incident light received through an aperture of the mobile device onto the co-planar image sensors, to thereby capture a HDR image. In some embodiments, greater than about 95% of the incident light received through the aperture of the device is reflected onto the image sensors.

公开(公告)号：US12094895B2

公开(公告)日：2024-09-17

申请号：US17838911

申请日：2022-06-13

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Junji Hirase ,  Yoshihiro Sato ,  Yasuyuki Endoh ,  Hiroyuki Amikawa

IPC分类号： H01L27/146 ,  H01L27/02 ,  H04N25/57 ,  H04N25/75 ,  H04N25/76

CPC分类号： H01L27/1461 ,  H01L27/0288 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/57 ,  H04N25/75 ,  H04N25/76

摘要： An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.

公开(公告)号：US12088936B2

公开(公告)日：2024-09-10

申请号：US18003417

申请日：2021-06-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Terukazu Tanaka ,  Atsumi Niwa

IPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778

CPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778 ,  H03G2201/103

摘要： An imaging device includes pixel circuit including a generation unit generating a voltage; a capacitor having a first electrode to which the voltage is applied; a first amplifier having a first input terminal, connected to a second electrode of the capacitor, and a second input terminal, to which a first reference voltage is applied to, to output a result by comparing the voltage with the first reference voltage; a switch unit controlling a connection between the output of the first amplifier and the first input terminal; and a second amplifier having a third input terminal, to which the output of the first amplifier is connected, and a fourth input terminal, to which a second reference voltage is applied, to output a result by comparing the voltage with the second reference voltage, in which a first gain of the first amplifier is lower than a second gain of the second amplifier.

公开(公告)号：US12068354B2

公开(公告)日：2024-08-20

申请号：US17241269

申请日：2021-04-27

申请人： CANON KABUSHIKI KAISHA

发明人： Daisuke Kobayashi

IPC分类号： H01L27/146 ,  H04N25/57 ,  H04N25/70 ,  H04N25/75

CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H04N25/57 ,  H04N25/70 ,  H04N25/75

摘要： Provided is a photoelectric conversion device including: a photoelectric conversion unit including one microlens and a plurality of photoelectric conversion elements, a readout circuit unit configured to read out a first signal based on charges accumulated by a first photoelectric conversion element of the plurality of photoelectric conversion elements and a second signal based on charges accumulated by a second photoelectric conversion element of the plurality of photoelectric conversion elements, and a signal processing unit configured to, according to a determination result based on at least one of the first signal and the second signal, output a third signal obtained by adding the first signal and the second signal or output a fourth signal by replacing the third signal with the fourth signal different from the third signal.

公开(公告)号：US20240196116A1

公开(公告)日：2024-06-13

申请号：US18553982

申请日：2022-04-04

申请人： Brillnics Singapore Pte. Ltd.

发明人： Ken MIYAUCHI ,  Isao TAKAYANAGI ,  Kazuya MORI

IPC分类号： H04N25/771 ,  H04N23/667 ,  H04N25/51 ,  H04N25/57 ,  H04N25/63 ,  H04N25/76

CPC分类号： H04N25/771 ,  H04N23/667 ,  H04N25/51 ,  H04N25/57 ,  H04N25/63 ,  H04N25/7795

摘要： A pixel circuit 200 includes a readable pixel 210, a comparator 220, and a selector counter circuit 230. The readable pixel 210 performs photoelectric conversion at a photodiode PD11 and produces a readable signal corresponding to an illuminance condition of incident light. The readable pixel 210 includes an overflow path extending to a floating diffusion FD11. The comparator 220 compares a voltage signal (SFout) read out from the readable pixel 210 against a reference signal Vref and outputs a comparison result signal Vout indicating the result of the comparison. The selector counter circuit 230 includes a selector circuit for selecting an external clock or the output Vout from the comparator and a counter circuit for counting the output from the selector circuit.

公开(公告)号：US20240179427A1

公开(公告)日：2024-05-30

申请号：US18432889

申请日：2024-02-05

申请人： CANON KABUSHIKI KAISHA

发明人： Daisuke Kobayashi

IPC分类号： H04N25/57 ,  G01C3/08 ,  G06N3/08 ,  H01L27/146 ,  H04N25/71 ,  H04N25/75 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79

CPC分类号： H04N25/57 ,  G01C3/08 ,  G06N3/08 ,  H01L27/14634 ,  H04N25/745 ,  H04N25/75 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79

摘要： A photoelectric conversion device according to one embodiment includes: a first substrate including a pixel that includes a photoelectric conversion element; and a second substrate including a first control unit that includes a first signal processing unit configured to process a signal from the pixel, the second substrate being stacked together with the first substrate. The signal from the pixel is output to a second signal processing unit disposed at a position different from a position of the first signal processing unit, a path through which the signal from the pixel is output to the first signal processing unit is different from a path through which the signal from the pixel is output to the second signal processing unit, and the first control unit is configured to control the pixel on the basis of the signal processed by the first signal processing unit.

公开(公告)号：US11991462B2

公开(公告)日：2024-05-21

申请号：US17708871

申请日：2022-03-30

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Masashi Murakami ,  Kazuko Nishimura ,  Yasuo Miyake ,  Yasunori Inoue

IPC分类号： H04N25/57 ,  H01L27/146

CPC分类号： H04N25/57 ,  H01L27/14612

摘要： An imaging device including a pixel that includes: a photoelectric converter that converts light into a charge; a charge accumulation region to which the charge is input; and an amplifier transistor that includes a gate electrically connected to the charge accumulation region. The amplifier transistor being configured to output a signal that corresponds to a potential of the charge accumulation region. The imaging device further including a detection circuit that is configured to detect a level of the signal from the amplifier transistor, wherein a sensitivity of the pixel is caused to be increased, in a case where the level detected by the detection circuit is greater than a first threshold value.

公开(公告)号：US20240063054A1

公开(公告)日：2024-02-22

申请号：US18500386

申请日：2023-11-02

申请人： SONY GROUP CORPORATION

发明人： KYOHEI MIZUTA

IPC分类号： H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L27/146 ,  H04N25/57 ,  H04N25/621 ,  H04N25/76

CPC分类号： H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14656 ,  H04N25/57 ,  H04N25/621 ,  H04N25/76

摘要： The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

公开(公告)号：US11877077B2

公开(公告)日：2024-01-16

申请号：US17247590

申请日：2020-12-17

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Debashree Guruaribam

IPC分类号： H04N25/671 ,  H04N25/40 ,  H04N25/53 ,  H04N25/57 ,  H04N25/75 ,  H04N25/621 ,  H04N25/633 ,  H04N25/771 ,  H04N25/63

CPC分类号： H04N25/671 ,  H04N25/40 ,  H04N25/53 ,  H04N25/57 ,  H04N25/621 ,  H04N25/633 ,  H04N25/75 ,  H04N25/771 ,  H04N25/63

摘要： An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. The array may include first and second sets of active pixels that are configured in different manners or controlled by the row control circuitry and column readout circuitry in different manners. The array may include optically black pixels that have photosensitive elements shield from incident light. The optically black pixels may be configured to generate first and second sets of black level signals adapted to both the first and second sets of active pixels. The corresponding sets of black level signals may be used to better reduce noise in corresponding sets of image signals generated by the first and second sets of active pixels.

公开(公告)号：US11765473B2

公开(公告)日：2023-09-19

申请号：US17174631

申请日：2021-02-12

申请人： NIKON CORPORATION

发明人： Atsushi Komai ,  Yoshiyuki Watanabe ,  Osamu Saruwatari

IPC分类号： H01L27/146 ,  H04N25/59 ,  H04N25/46 ,  H04N25/57 ,  H04N25/77 ,  H04N23/667 ,  H04N25/75

CPC分类号： H04N25/59 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H04N25/46 ,  H04N25/57 ,  H04N25/77 ,  H04N23/667 ,  H04N25/75

摘要： An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.