公开(公告)号：US20230178677A1

公开(公告)日：2023-06-08

申请号：US18147566

申请日：2022-12-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Younes BENHAMMOU ,  Dominique GOLANSKI ,  Denis RIDEAU

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/0284 ,  H01L31/0745 ,  H01L31/1812

Abstract: The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.