公开(公告)号：US20240194815A1

公开(公告)日：2024-06-13

申请号：US18588656

申请日：2024-02-27

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

Inventor： Denis RIDEAU ,  Dominique GOLANSKI ,  Alexandre LOPEZ ,  Gabriel MUGNY

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/186

Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.

公开(公告)号：US20230178677A1

公开(公告)日：2023-06-08

申请号：US18147566

申请日：2022-12-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Younes BENHAMMOU ,  Dominique GOLANSKI ,  Denis RIDEAU

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0745 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/0284 ,  H01L31/0745 ,  H01L31/1812

Abstract: The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.

公开(公告)号：US20220190184A1

公开(公告)日：2022-06-16

申请号：US17546503

申请日：2021-12-09

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

Inventor： Denis RIDEAU ,  Dominique GOLANSKI ,  Alexandre LOPEZ ,  Gabriel MUGNY

IPC: H01L31/107 ,  H01L31/18

Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.