公开(公告)号：US20210088378A1

公开(公告)日：2021-03-25

申请号：US17024202

申请日：2020-09-17

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Stephane MONFRAY ,  Olivier LE NEEL ,  Frederic BOEUF

IPC: G01J1/04 ,  H01L31/0232 ,  H01L31/101 ,  G02B5/18 ,  G01J1/44

Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

公开(公告)号：US20220091330A1

公开(公告)日：2022-03-24

申请号：US17540626

申请日：2021-12-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20220231483A1

公开(公告)日：2022-07-21

申请号：US17715509

申请日：2022-04-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mathias PROST ,  Moustafa EL KURDI ,  Philippe BOUCAUD ,  Frederic BOEUF

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  H01S5/10

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20200266609A1

公开(公告)日：2020-08-20

申请号：US16867666

申请日：2020-05-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mathias PROST ,  Moustafa EL KURDI ,  Philippe BOUCAUD ,  Frederic BOEUF

IPC: H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/227 ,  H01S5/042 ,  H01S5/02

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20200241201A1

公开(公告)日：2020-07-30

申请号：US16847189

申请日：2020-04-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/30 ,  G02B6/27 ,  G02B6/126 ,  G02B6/122

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.