公开(公告)号：US20230290786A1

公开(公告)日：2023-09-14

申请号：US18118391

申请日：2023-03-07

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Sebastien CREMER ,  Frederic MONSIEUR ,  Alain FLEURY ,  Sebastien HAENDLER

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/1203 ,  H01L21/76264 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53257

Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.

公开(公告)号：US20240204114A1

公开(公告)日：2024-06-20

申请号：US18537135

申请日：2023-12-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic MONSIEUR

IPC: H01L29/93 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L29/93 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/66136 ,  H01L29/8611

Abstract: A variable-capacitance diode is formed in a doped semiconductor substrate of a first conductivity type. The diode includes a first doped region of a second conductivity type in semiconductor substrate. A second doped region of the first conductivity type in a portion of the first doped region and a third doped region of second conductivity type in a further portion of the first doped region form a PN junction of the diode. First insulating trenches laterally delimit the each PN junction. Doped areas having a doping level heavier than the first doped region are provided within the first doped region under and in contact with a bottom of each first insulating trench. The diode is surrounded by a second insulating trench deeper than the first insulating trench.