公开(公告)号：US20240186318A1

公开(公告)日：2024-06-06

申请号：US18526384

申请日：2023-12-01

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian RIVERO ,  Joel METZ ,  Brice ARRAZAT

IPC: H01L27/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/94

CPC classification number: H01L27/0629 ,  H01L29/42336 ,  H01L29/66181 ,  H01L29/945

Abstract: An integrated circuit includes a capacitive transistor supported by a semiconductor substrate. The capacitive transistor includes: a drain and a source formed in the semiconductor substrate; a gate having a first portion extending in depth in the semiconductor substrate, and a second portion prolonging said first portion and extending over the semiconductor substrate; and a dielectric layer extending between the gate and the semiconductor substrate.

公开(公告)号：US20220005960A1

公开(公告)日：2022-01-06

申请号：US17366585

申请日：2021-07-02

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian RIVERO ,  Brice ARRAZAT ,  Julien DELALLEAU ,  Joel METZ

IPC: H01L29/94 ,  H01L29/423 ,  H01L29/788 ,  H01L27/11524 ,  H01L49/02 ,  H01L21/28 ,  H01L21/265

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

公开(公告)号：US20230327028A1

公开(公告)日：2023-10-12

申请号：US18210155

申请日：2023-06-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian RIVERO ,  Brice ARRAZAT ,  Julien DELALLEAU ,  Joel METZ

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/265 ,  H01L29/423 ,  H01L29/788 ,  H10B41/35

CPC classification number: H01L29/945 ,  H01L29/40114 ,  H01L21/2652 ,  H01L28/91 ,  H01L29/4236 ,  H01L29/788 ,  H10B41/35

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.