公开(公告)号：US11621051B2

公开(公告)日：2023-04-04

申请号：US17647793

申请日：2022-01-12

Applicant: STMicroelectronics (Rousset) SAS ,  STMICROELECTRONICS SA

Inventor： Stephane Denorme ,  Philippe Candelier ,  Joel Damiens ,  Fabrice Marinet

IPC: G11C11/34 ,  G11C29/52 ,  G11C17/12

Abstract: A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

公开(公告)号：US11250930B2

公开(公告)日：2022-02-15

申请号：US16709019

申请日：2019-12-10

Applicant: STMicroelectronics SA ,  STMicroelectronics (Rousset) SAS

Inventor： Stephane Denorme ,  Philippe Candelier ,  Joel Damiens ,  Fabrice Marinet

IPC: G11C17/00 ,  G11C29/52 ,  G11C17/12

Abstract: A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

公开(公告)号：US20220139491A1

公开(公告)日：2022-05-05

申请号：US17647793

申请日：2022-01-12

Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics SA

Inventor： Stephane Denorme ,  Philippe Candelier ,  Joel Damiens ,  Fabrice Marinet

IPC: G11C29/52 ,  G11C17/12

Abstract: A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

公开(公告)号：US11164647B2

公开(公告)日：2021-11-02

申请号：US16713947

申请日：2019-12-13

Applicant: STMicroelectronics SA

Inventor： Stephane Denorme ,  Philippe Candelier

IPC: G11C5/06 ,  G11C17/12 ,  H01L27/112 ,  G11C5/02

Abstract: A device includes a number of irreversibly programmable memory points. Each irreversibly programmable memory point includes a first semiconductor zone and a gate located on the first zone. A conductive area defines the gates of the memory points. First and second semiconductor areas are respectively located on either side of a vertical alignment with the conductive area. The first zones are alternately in contact with the first and second areas.

公开(公告)号：US11355503B2

公开(公告)日：2022-06-07

申请号：US16708912

申请日：2019-12-10

Applicant: STMicroelectronics SA

Inventor： Stephane Denorme ,  Philippe Candelier

IPC: H01L27/112 ,  H01L23/528 ,  G11C17/18 ,  H01L27/02 ,  H01L29/423

Abstract: A device includes at least three memory cells. For each cell, there is a first doped semiconductor area and a switch coupling the cell to the first area. First doped semiconductor zones connect the first areas together. A memory can include a number of the devices. For example, the cells can be arranged in a matrix, each device defining a row of the matrix.

公开(公告)号：US20160307640A1

公开(公告)日：2016-10-20

申请号：US14956963

申请日：2015-12-02

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Antoine Benoist ,  Stephane Denorme ,  Joel Damiens

IPC: G11C17/16 ,  G11C17/18

CPC classification number: G11C17/165 ,  G11C5/145 ,  G11C5/147 ,  G11C7/04 ,  G11C17/16 ,  G11C17/18

Abstract: A memory cell of the one-time-programmable type is programmed by application of a programming voltage having a value sufficient to obtain a breakdown of a dielectric of a capacitor within the cell. A programming circuit generates the programming voltage as a variable voltage that varies as a function of a temperature (T) of the cell. In particular, the programming voltage varies based on a variation law decreasing as a function of the temperature.

Abstract translation: 通过施加具有足以获得电池内的电容器的电介质的击穿的编程电压来编程一次性可编程类型的存储单元。 编程电路产生编程电压作为可变电压，其随电池的温度（T）而变化）。 特别地，编程电压根据作为温度的函数的变化规律减小而变化。

公开(公告)号：US20170301681A1

公开(公告)日：2017-10-19

申请号：US15377861

申请日：2016-12-13

Applicant: STMicroelectronics SA

Inventor： Stephane Denorme ,  Philippe Candelier

IPC: H01L27/112 ,  H01L23/00 ,  H01L23/525 ,  H01L27/02 ,  G11C17/16

CPC classification number: H01L27/11206 ,  G11C11/005 ,  G11C17/10 ,  G11C17/16 ,  H01L23/5252 ,  H01L23/57 ,  H01L27/0203

Abstract: A configurable read only memory (ROM) including a number of memory cells. The memory cells include first-type memory cells that are electrically-programmable antifuses and second-type memory cells that are antifuses programmed by masking.