公开(公告)号：US20220416053A1

公开(公告)日：2022-12-29

申请号：US17899071

申请日：2022-08-30

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Samuel MENARD

IPC: H01L29/47 ,  H01L29/73 ,  H01L29/747 ,  H01L29/74 ,  H01L29/732 ,  H01L29/417

Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

公开(公告)号：US20250169151A1

公开(公告)日：2025-05-22

申请号：US19029853

申请日：2025-01-17

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Samuel MENARD

IPC: H10D64/64 ,  H10D10/00 ,  H10D10/40 ,  H10D18/00 ,  H10D18/80 ,  H10D62/83 ,  H10D64/23 ,  H10D64/62

Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

公开(公告)号：US20200258818A1

公开(公告)日：2020-08-13

申请号：US16785956

申请日：2020-02-10

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel MENARD ,  Laurent BARREAU

IPC: H01L23/492 ,  H01L29/747 ,  H01L23/00 ,  H01L23/14

Abstract: A vertical power component includes a semiconductor substrate, a first electrode in contact with a lower surface of the substrate, and a second electrode in contact with an upper surface of the substrate. The vertical component is mounted to a metal connection plate via a metal spacer. The metal spacer includes a lower surface soldered to the metal connection plate and an upper surface soldered to the first electrode of the vertical power component. The metal spacer is made of a same metal as the metal connection plate. A surface are of the metal spacer mounted to the first electrode is smaller than a surface area of the first electrode.

公开(公告)号：US20190214476A1

公开(公告)日：2019-07-11

申请号：US16230137

申请日：2018-12-21

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Samuel MENARD

IPC: H01L29/47 ,  H01L29/73 ,  H01L29/732 ,  H01L29/74 ,  H01L29/747

CPC classification number: H01L29/47 ,  H01L29/456 ,  H01L29/73 ,  H01L29/7308 ,  H01L29/732 ,  H01L29/74 ,  H01L29/747

Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

公开(公告)号：US20190043972A1

公开(公告)日：2019-02-07

申请号：US16052378

申请日：2018-08-01

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel MENARD

IPC: H01L29/747 ,  H01L29/66

CPC classification number: H01L29/747 ,  H01L29/0619 ,  H01L29/0839 ,  H01L29/42308 ,  H01L29/66386 ,  H01L29/7404

Abstract: A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.