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公开(公告)号:US20240363187A1
公开(公告)日:2024-10-31
申请号:US18635569
申请日:2024-04-15
Applicant: STMicroelectronics International N.V.
Inventor: Praveen Kumar VERMA , Christophe LECOCQ , Yagnesh Dineshbhai VADERIYA , Anuj DHILLON , Cedric ESCALLIER , Harsh RAWAT , Kedar Janardan DHORI
CPC classification number: G11C29/46 , G11C29/022 , G11C29/32 , G11C2029/3202
Abstract: A memory system disclosed herein features left and/or right memory banks, with left and/or right input/output (IO) blocks aligned with the memory banks for managing data input and output. A control section, situated between the left and right input/output blocks, oversees memory operations, receives control signals, and performs stuck-at testing. The control section includes fault detection logic designed to output a first logic value (e.g., logic low) if logic values at each of its external inputs are identical, but output a second logic value (e.g., logic high) if not. The fault detection logic is capable of detecting stuck-at faults in the external inputs by performing both stuck-at-0 and stuck-at-1 testing. If only stuck-at-0 or stuck-at-1 faults are detected, the fault detection logic can pinpoint those faults by iteratively changing input values at each of its external inputs and observing the output of the fault detection logic.
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公开(公告)号:US20240331767A1
公开(公告)日:2024-10-03
申请号:US18614460
申请日:2024-03-22
Applicant: STMicroelectronics International N.V.
Inventor: Praveen Kumar VERMA , Anuj DHILLON
IPC: G11C11/419 , G11C11/418
CPC classification number: G11C11/419 , G11C11/418
Abstract: The present disclosure is directed to a device and method for accurately estimating a write self-time of a memory array. The write self-time is estimated by performing a simulated write operation on a write self-time bit cell having the same structure and arrangement as each of the bit cells of the memory array. The write operations on the bit cells of the memory array are stopped in response to detecting completion of the simulated write operation.
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