BIT CELL BASED WRITE SELF-TIME DELAY PATH
    2.
    发明公开

    公开(公告)号:US20240331767A1

    公开(公告)日:2024-10-03

    申请号:US18614460

    申请日:2024-03-22

    CPC classification number: G11C11/419 G11C11/418

    Abstract: The present disclosure is directed to a device and method for accurately estimating a write self-time of a memory array. The write self-time is estimated by performing a simulated write operation on a write self-time bit cell having the same structure and arrangement as each of the bit cells of the memory array. The write operations on the bit cells of the memory array are stopped in response to detecting completion of the simulated write operation.

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