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公开(公告)号：US20240205611A1
公开(公告)日：2024-06-20
申请号：US18066148
申请日：2022-12-14
Applicant: STMicroelectronics International N.V.
Inventor： Domenico GIUSTI , Fabio QUAGLIA , Marco FERRERA , Carlo Luigi PRELINI
IPC: H04R17/00
CPC classification number: H04R17/00
Abstract: The present disclosure is directed to transducer assemblies or device in which one or more buried cavities are present within a substrate and define or form one or more membranes along a surface of the substrate. One or more piezoelectric actuators are formed on the one or more membranes and the one or more piezoelectric actuators drive the membranes at an operating frequency with an operating bandwidth of the transducer assemblies. Each of the one or more membranes is anchored at respective portions to a main body portion of the substrate to provide robust and strong anchoring of each of the one or more membranes to push unwanted flexure modes outside the operating bandwidth of the transducer assemblies.
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公开(公告)号：US20250018427A1
公开(公告)日：2025-01-16
申请号：US18761061
申请日：2024-07-01
Applicant: STMicroelectronics International N.V.
Inventor： Alessandro Stuart SAVOIA , Domenico GIUSTI , Carlo Luigi PRELINI
Abstract: Micromachined ultrasonic transducer wherein a die including semiconductor material accommodates at least one ultrasonic cell. Each ultrasonic cell includes a piezoelectric structure, a cavity, and a membrane region, vertically aligned with each other. The cavity extends inside the die and downwardly delimits the membrane region. The piezoelectric structure is arranged on the membrane region and has at least one annular-shaped piezoelectric region. The micromachined ultrasonic transducer is configured to operate around the second axisymmetric vibration mode.
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3.发明申请公开(公告)号：US20240389484A1
公开(公告)日：2024-11-21
申请号：US18659436
申请日：2024-05-09
Applicant: STMicroelectronics International N.V.
Inventor： Massimo BORGHI , Annalisa GILARDINI , Elisabetta PALUMBO , Carlo Luigi PRELINI , Paola ZULIANI
Abstract: A phase change memory element includes a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and is made of a GST alloy. An average percentage of germanium in the GST alloy is higher than 50%. The memory region has a storage portion formed by a GST alloy that includes nitrogen in an electrically relevant amount. The GST alloy of the storage portion has a percentage of germanium inclusively between 60% and 68%; a percentage of antimony inclusively between 9% and 5%; a percentage of tellurium inclusively between 18% and 10%; and a percentage of nitrogen inclusively between 5% and 25%.
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公开(公告)号：US20240288680A1
公开(公告)日：2024-08-29
申请号：US18584533
申请日：2024-02-22
Applicant: STMicroelectronics International N.V.
Inventor： Roberto CARMINATI , Tarek AFIFI AFIFI , Carlo Luigi PRELINI , Sonia COSTANTINI
CPC classification number: G02B26/0833 , G01B7/22 , G02B26/101
Abstract: A MEMS device includes a semiconductor body with a fixed structure defining a cavity, and a deformable main body suspended on the cavity. A piezoelectric actuator is on the deformable main body, and a piezoelectric sensor element is on the deformable main body, which forms with the deformable main body a strain sensor. The piezoelectric sensor element includes a detection piezoelectric region of aluminum nitride on the deformable main body, and an intermediate detection electrode on the detection piezoelectric region. The deformable main body, the detection piezoelectric region, and the intermediate detection electrode form a first detection capacitor of the strain sensor. The deformable main body, the piezoelectric actuator, and the piezoelectric sensor element form a deformable structure suspended on the cavity and deformable by the piezoelectric actuator, with the strain sensor allowing the deformation of the deformable structure to be detected.
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