Solid state image sensors and microlens arrays
    1.
    发明申请
    Solid state image sensors and microlens arrays 有权
    固态图像传感器和微透镜阵列

    公开(公告)号:US20020079491A1

    公开(公告)日:2002-06-27

    申请号:US10008606

    申请日:2001-12-06

    Inventor: Jeff Raynor

    CPC classification number: H01L27/14627

    Abstract: A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.

    Abstract translation: 固态图像传感器包括像素阵列和相应的微透镜阵列。 微透镜相对于其对应像素的位置可以根据像素与图像传感器的中心光轴的距离而变化,以基本上消除由微透镜收集的光的渐晕。

    Semiconductor structure
    2.
    发明申请
    Semiconductor structure 有权
    半导体结构

    公开(公告)号:US20030218195A1

    公开(公告)日:2003-11-27

    申请号:US10401276

    申请日:2003-03-27

    Inventor: Jeff Raynor

    CPC classification number: H01L27/14609

    Abstract: A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40-60 nullm, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4-6 nullm. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.

    Abstract translation: 固态图像传感器具有形成在衬底上的外延层上的像素阵列。 每个像素相对较大,因此其具有高的聚光能力,例如40-60μm,但像素光电二极管相对较小,因此其具有低电容,例如4-6μm。 像素光电二极管的有源元件形成在与像素光电二极管间隔开的阱中,使得其被外延材料包围。

    Method for generating unique image sensor identification, and image sensor system for use therewith
    3.
    发明申请
    Method for generating unique image sensor identification, and image sensor system for use therewith 有权
    用于产生独特图像传感器识别的方法,以及与其一起使用的图像传感器系统

    公开(公告)号:US20020191091A1

    公开(公告)日:2002-12-19

    申请号:US10156721

    申请日:2002-05-28

    Inventor: Jeff Raynor

    CPC classification number: H04N1/32128 H04N2201/3205 H04N2201/3215

    Abstract: A method is for generating a key from the fixed pattern noise (FPN) of a CMOS image sensor to be used in generating a digital authentication signature. The key may be generated by temporarily disabling the FPN cancellation circuit that is conventionally included in the system, and generating a substantially nullblacknull image to produce a digitized FPN signal. The key may then be generated from characteristics of the FPN, such as by comparing pairs of pixels, for example.

    Abstract translation: 一种用于从用于产生数字认证签名的CMOS图像传感器的固定模式噪声(FPN)产生密钥的方法。 可以通过临时禁用系统中常规包括的FPN消除电路并产生基本上“黑”的图像以产生数字化的FPN信号来产生密钥。 然后,可以例如通过比较像素对,从FPN的特征产生密钥。

Patent Agency Ranking