Abstract:
A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.
Abstract:
A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40-60 nullm, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4-6 nullm. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.
Abstract:
A method is for generating a key from the fixed pattern noise (FPN) of a CMOS image sensor to be used in generating a digital authentication signature. The key may be generated by temporarily disabling the FPN cancellation circuit that is conventionally included in the system, and generating a substantially nullblacknull image to produce a digitized FPN signal. The key may then be generated from characteristics of the FPN, such as by comparing pairs of pixels, for example.