公开(公告)号：US08994138B2

公开(公告)日：2015-03-31

申请号：US13710260

申请日：2012-12-10

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles2) SAS

Inventor： François Roy ,  Sebastien Place

IPC: H01L27/146 ,  H01L31/18 ,  H04N5/76

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/1463 ,  H01L31/18 ,  H04N5/76

Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.

Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。

公开(公告)号：US20130155283A1

公开(公告)日：2013-06-20

申请号：US13710260

申请日：2012-12-10

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles2) SAS

Inventor： François Roy ,  Sebastien Place

IPC: H01L27/146 ,  H04N5/76 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/1463 ,  H01L31/18 ,  H04N5/76

Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.

Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。