公开(公告)号：US20040124494A1

公开(公告)日：2004-07-01

申请号：US10608855

申请日：2003-06-27

Applicant: STMicroelectronics S.r.I.

Inventor： Francesco Ciovacco ,  Chiara Savardi ,  Roberto Colombo

IPC: H01L029/00

CPC classification number: H01L21/76232 ,  H01L21/3065 ,  H01L21/3086

Abstract: A process for forming trenches with an oblique profile and rounded top corners, including the steps of: in a semiconductor wafer, through a first polymerizing etch, forming depressions delimited by rounded top corners; and through a second polymerizing etch, opening trenches at the depressions. The second polymerizing etch is made in variable plasma conditions, so that the trenches have oblique walls with a constant slope.

Abstract translation: 一种用于形成具有倾斜轮廓和圆形顶角的沟槽的方法，包括以下步骤：在半导体晶片中，通过第一聚合蚀刻，形成由圆角顶角限定的凹陷; 并通过第二聚合蚀刻，在凹陷处打开沟槽。 在可变等离子体条件下进行第二次聚合蚀刻，使得沟槽具有斜率为斜率的倾斜壁。

公开(公告)号：US20040029307A1

公开(公告)日：2004-02-12

申请号：US10428338

申请日：2003-05-01

Applicant: STMicroelectronics S.r.I.

Inventor： Francesco Ciovacco ,  Simone Alba ,  Roberto Colombo ,  Chiara Savardi

IPC: H01L021/00

CPC classification number: H01L21/823437 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76804 ,  H01L21/76816

Abstract: A method for manufacturing semiconductor-integrated electronic circuits comprises: depositing an auxiliary layer on a substrate; depositing a layer of screening material on the auxiliary layer; selectively removing the layer of screening material to provide a first opening in the layer of screening material and expose an area of the auxiliary layer; and removing this area of the auxiliary layer to form a second opening in the auxiliary layer, whose cross-section narrows toward the substrate to expose an area of the substrate being smaller than the area exposed by the first opening.

Abstract translation: 一种用于制造半导体集成电子电路的方法包括：在衬底上沉积辅助层; 在辅助层上沉积一层筛选材料; 选择性地去除所述筛选材料层以在所述筛选材料层中提供第一开口并暴露所述辅助层的区域; 并且去除辅助层的该区域以在辅助层中形成第二开口，其横截面朝向衬底变窄，以暴露衬底的区域小于由第一开口暴露的区域。