公开(公告)号：US20040151023A1

公开(公告)日：2004-08-05

申请号：US10715883

申请日：2003-11-18

Applicant: STMicroelectronics S.r.I. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Ferdinando Bedeschi ,  Claudio Resta

IPC: G11C011/00

CPC classification number: G11C7/04 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2029/5002 ,  G11C2213/79

Abstract: A phase change memory includes a temperature sensor having a resistance variable with temperature with the same law as a phase-change storage element. The temperature sensor is formed by a resistor of chalcogenic material furnishing an electrical quantity that reproduces the relationship between the resistance of a phase change memory cell and temperature; the electrical quantity is processed so as to generate reference quantities as necessary for writing and reading the memory cells. The chalcogenic resistor has the same structure as a memory cell and is programmed with precision, preferably in the reset state.

Abstract translation: 相变存储器包括具有与相变存储元件相同定律的具有温度的电阻变化的温度传感器。 该温度传感器是由一个硫化物材料的电阻器形成的，它提供一个再现相变存储器单元电阻和温度之间的关系的电量; 对电量进行处理，以便产生写入和读取存储单元所需的参考量。 硫属电阻器具有与存储器单元相同的结构，并且精确地编程，优选地处于复位状态。

公开(公告)号：US20040228163A1

公开(公告)日：2004-11-18

申请号：US10782737

申请日：2004-02-18

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Claudio Resta

IPC: G11C011/00

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/79

Abstract: A phase change memory has an array formed by a plurality of cells, each including a memory element of calcogenic material and a selection element connected in series to the memory element; a plurality of address lines connected to the cells; a write stage and a reading stage connected to the array. The write stage is formed by current generators, which supply preset currents to the selected cells so as to modify the resistance of the memory element. Reading takes place in voltage, by appropriately biasing the selected cell and comparing the current flowing therein with a reference value.

Abstract translation: 相变存储器具有由多个单元形成的阵列，每个单元包括煅烧材料的存储元件和与存储元件串联连接的选择元件; 连接到所述单元的多个地址线; 连接到阵列的写阶段和阅读阶段。 写入级由电流发生器形成，电流发生器向所选择的单元提供预设电流，以便改变存储元件的电阻。 读取通过适当地偏置所选择的单元并将其中流动的电流与参考值进行比较来进行电压。