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1.发明申请公开(公告)号：US20140159717A1
公开(公告)日：2014-06-12
申请号：US14102899
申请日：2013-12-11
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Dino Faralli , Andrea Picco
CPC classification number: G01R33/09 , G01R33/0011 , G01R33/0052 , G01R33/096
Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.
Abstract translation: 一种集成磁阻传感器，其形成在包括具有覆盖基板的表面的表面和绝缘区域的基板的芯片中。 第一铁磁材料的磁阻电阻器形成在绝缘区域中并且具有平行于表面的灵敏度平面。 第二铁磁材料的集中器形成在基板中，并且具有至少一个在横向方向上延伸到灵敏度平面的臂。 臂的一端与磁电阻接触。
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公开(公告)号：US11427463B2
公开(公告)日：2022-08-30
申请号：US16165828
申请日：2018-10-19
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Dario Paci , Marco Ferrera , Andrea Picco
IPC: B81B3/00 , H01L41/09 , H01L41/22 , B81C1/00 , H01L41/31 , G02B3/14 , G02B26/08 , H01L25/16 , H01L41/187
Abstract: A MEMS device comprising a body, having a first surface and a second surface; a diaphragm cavity in the body extending from the second surface of the body; a deformable portion in the body between the first surface and the diaphragm cavity; and a piezoelectric actuator, extending on the first surface of the body, over the deformable portion. The MEMS device is characterized in that it comprises a recess structure extending in the body and delimiting a stopper portion for the deformable portion.
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Patent Agency Ranking
公开(公告)号：US10023461B2
公开(公告)日：2018-07-17
申请号：US14838100
申请日：2015-08-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Andrea Picco
Abstract: The microintegrated sensor comprises a stack formed by a sensor layer, of semiconductor material, by a cap layer, of semiconductor material, and by an insulating layer. The sensor layer and the cap layer have a respective peripheral portion surrounding a central portion, and the insulating layer extends between the peripheral portions of the sensor layer and of the cap layer. An air gap extends between the central portions of the sensor layer and of the protection layer. A through trench extends into the central portion of the sensor layer as far as the air gap and surrounds a platform housing a sensitive element. The cap layer has through holes in the insulating layer that extend from the air gap and form a fluidic path with the air gap and the through trench.
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公开(公告)号：US10724909B2
公开(公告)日：2020-07-28
申请号：US15894770
申请日：2018-02-12
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mohammad Abbasi Gavarti , Daniele Caltabiano , Andrea Picco , Anna Angela Pomarico , Giuditta Roselli , Francesco Braghin
Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.
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5.发明授权Magnetoresistive sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof 有权集成在用于检测垂直于芯片的磁场的芯片中的磁阻传感器及其制造方法公开(公告)号：US09568566B2
公开(公告)日：2017-02-14
申请号：US14102899
申请日：2013-12-11
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Dino Faralli , Andrea Picco
CPC classification number: G01R33/09 , G01R33/0011 , G01R33/0052 , G01R33/096
Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.
Abstract translation: 一种集成磁阻传感器，其形成在包括具有覆盖基板的表面的表面和绝缘区域的基板的芯片中。 第一铁磁材料的磁阻电阻器形成在绝缘区域中并且具有平行于表面的灵敏度平面。 第二铁磁材料的集中器形成在基板中，并且具有至少一个在横向方向上延伸到灵敏度平面的臂。 臂的一端与磁电阻接触。
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公开(公告)号：US11009412B2
公开(公告)日：2021-05-18
申请号：US16904123
申请日：2020-06-17
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mohammad Abbasi Gavarti , Daniele Caltabiano , Andrea Picco , Anna Angela Pomarico , Giuditta Roselli , Francesco Braghin
Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.
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7.发明申请MICROINTEGRATED ENCAPSULATED MEMS SENSOR WITH MECHANICAL DECOUPLING AND MANUFACTURING PROCESS THEREOF 有权微机械封装MEMS传感器，具有机械解压及其制造工艺公开(公告)号：US20160122181A1
公开(公告)日：2016-05-05
申请号：US14838100
申请日：2015-08-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Andrea Picco
CPC classification number: B81B7/0058 , B81B7/0048 , B81B7/0051 , B81B2201/0257 , B81B2201/0264 , B81C1/00325 , G01L9/0042 , G01L9/0054
Abstract: The microintegrated sensor comprises a stack formed by a sensor layer, of semiconductor material, by a cap layer, of semiconductor material, and by an insulating layer. The sensor layer and the cap layer have a respective peripheral portion surrounding a central portion, and the insulating layer extends between the peripheral portions of the sensor layer and of the cap layer. An air gap extends between the central portions of the sensor layer and of the protection layer. A through trench extends into the central portion of the sensor layer as far as the air gap and surrounds a platform housing a sensitive element. The cap layer has through holes in the insulating layer that extend from the air gap and form a fluidic path with the air gap and the through trench.
Abstract translation: 微集成传感器包括由传感器层，半导体材料，帽层，半导体材料和绝缘层形成的叠层。 传感器层和盖层具有围绕中心部分的相应周边部分，并且绝缘层在传感器层和盖层的周边部分之间延伸。 气隙在传感器层的中心部分和保护层之间延伸。 通孔延伸到传感器层的中心部分，直到气隙，并且围绕容纳敏感元件的平台。 盖层在绝缘层中具有从气隙延伸的通孔，并与气隙和穿通槽形成流体路径。
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