METHOD AND DEVICE FOR MONITORING AT LEAST A CHARACTERISTIC OF A BLOCK MADE OF A BUILDING MATERIAL
    2.
    发明申请
    METHOD AND DEVICE FOR MONITORING AT LEAST A CHARACTERISTIC OF A BLOCK MADE OF A BUILDING MATERIAL 有权
    至少监控建筑材料块的特征的方法和装置

    公开(公告)号:US20130221945A1

    公开(公告)日:2013-08-29

    申请号:US13770492

    申请日:2013-02-19

    CPC classification number: G01N27/00 G01M5/0083 H04Q9/00 H04Q2209/88

    Abstract: A monitoring device includes an electric supply line to be buried in the block of building material, to convey signals and to be AC supplied so as to generate voltage and current stationary waveforms. The device also includes primary inductors coupled to the electric supply line at positions corresponding to peaks of at least one of the voltage and current stationary waveforms. The device also includes integrated monitoring circuits to be buried in the block of building material, with each integrated monitoring circuit including an integrated sensor to sense at least one physical characteristic, and a secondary inductor magnetically coupled to a respective primary inductor to supply the integrated sensor, and communicate through the electric supply line.

    Abstract translation: 监控装置包括要埋在建筑材料块中的电力供应线,以传送信号并且被供电以产生电压和电流静止波形。 该装置还包括在对应于电压和电流静止波形中的至少一个的峰值的位置处耦合到电源线的初级电感器。 该装置还包括要埋在建筑材料块中的集成监控电路,每个集成监控电路包括用于感测至少一个物理特性的集成传感器,以及磁耦合到相应的初级电感器的次级电感器,以提供集成传感器 ,并通过电源线进行通信。

    PASSIVE MONITORING DEVICE OF THE INNER PRESSURE IN A BLOCK OF BUILDING MATERIAL
    4.
    发明申请
    PASSIVE MONITORING DEVICE OF THE INNER PRESSURE IN A BLOCK OF BUILDING MATERIAL 有权
    建筑材料块内部压力的被动监测装置

    公开(公告)号:US20130255395A1

    公开(公告)日:2013-10-03

    申请号:US13851671

    申请日:2013-03-27

    CPC classification number: G01L1/14 G01M5/00

    Abstract: A monitoring device is for the inner pressure distribution of building material in a building structure. The device may include planar sensing capacitors to be buried in contact with the building material, with each sensing capacitor including a pair of plates and a dielectric material layer therebetween adapted to undergo elastic deformation under pressure without deforming plastically. The device may also include a protection box to be buried in the building material, a dielectric material enclosed in the protection box, and connection terminals protruding from the protection box. Pairs of metal vias are buried in the dielectric material enclosed within the protection box, with each pair connecting the plates of a respective planar sensing capacitor to respective connection terminals.

    Abstract translation: 监测装置用于建筑结构中的建筑材料的内部压力分布。 该装置可以包括要与建筑材料接触的平面感测电容器,每个感测电容器包括一对板和介于其之间的电介质材料层,适于在压力下经受弹性变形而不会塑性变形。 该装置还可以包括要埋在建筑材料中的保护盒,封闭在保护盒中的电介质材料以及从保护盒突出的连接端子。 金属通孔对被埋在封装在保护箱内的电介质材料中,每对将相应的平面感测电容器的板连接到相应的连接端子。

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED

    公开(公告)号:US20210359189A1

    公开(公告)日:2021-11-18

    申请号:US17321252

    申请日:2021-05-14

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    INTEGRATED ELECTRONIC DEVICE FOR MONITORING HUMIDITY AND/OR CORROSION

    公开(公告)号:US20180217078A1

    公开(公告)日:2018-08-02

    申请号:US15928681

    申请日:2018-03-22

    CPC classification number: G01N27/223 G01N17/04

    Abstract: An integrated electronic device, for detecting for detecting changes in an environmental parameter indicative of an environment surrounding the device, includes: a first conductive element and a second conductive element; a measurement circuit including a first measurement terminal and a second measurement terminal respectively coupled to the first conductive element and the second conductive element. The measurement circuit is configured to provide an electrical potential difference between the first conductive element and the second conductive element is configured to determine a change in an impedance of an electromagnetic circuit including the first conductive element and the second conductive element and formed between the first measurement terminal and the second measurement terminal. The device determines that an increase in a presence of water within the environment has occurred in response to a decrease in a real part of the impedance of the electromagnetic circuit.

    PRESSURE SENSING DEVICE WITH CAVITY AND RELATED METHODS
    8.
    发明申请
    PRESSURE SENSING DEVICE WITH CAVITY AND RELATED METHODS 有权
    压力传感装置与相关方法

    公开(公告)号:US20160245709A1

    公开(公告)日:2016-08-25

    申请号:US14626153

    申请日:2015-02-19

    CPC classification number: G01L5/0038 F16B31/028 G01L1/18 G01L1/20

    Abstract: A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

    Abstract translation: 压力感测装置可以包括构造成分配施加在彼此定位的第一和第二部件之间的负载的主体和由主体承载的压力传感器。 压力传感器可以包括支撑体和安装有支撑体并且限定空腔的IC模具。 IC芯片可以包括响应于与空腔相关联的弯曲的压力感测电路,以及耦合到压力感测电路的IC接口。

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED

    公开(公告)号:US20230301191A1

    公开(公告)日:2023-09-21

    申请号:US18323262

    申请日:2023-05-24

    CPC classification number: H10N10/855 H10N10/01 H10N10/17

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

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