公开(公告)号：US20240429273A1

公开(公告)日：2024-12-26

申请号：US18825974

申请日：2024-09-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Antonello SANTANGELO ,  Giuseppe LONGO ,  Lucio RENNA

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US20190128830A1

公开(公告)日：2019-05-02

申请号：US16171151

申请日：2018-10-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra ALBERTI ,  Lucio RENNA ,  Leonardo GERVASI ,  Emanuele SMECCA ,  Salvatore SANZARO ,  Clelia Carmen GALATI ,  Antonello SANTANGELO ,  Antonino LA MAGNA

IPC: G01N27/12 ,  B81B3/00 ,  B81C1/00

Abstract: Gas sensor, comprising: a substrate of semiconductor material; a first working electrode on the substrate; a second working electrode on the substrate, at a distance from the first working electrode; an interconnection layer extending in electrical contact with the first and the second working electrode, configured to change its conductivity when reacting with gas species to be detected. The interconnection layer is of titanium oxide, has a porosity between 40% and 60% in volume and is formed by a plurality of meso-pores having at least one dimension in the range 6-30 nm connected to nano-pores having at least one respective dimension in the range 1-5 nm.

公开(公告)号：US20210147912A1

公开(公告)日：2021-05-20

申请号：US17159028

申请日：2021-01-26

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Lucio RENNA ,  Clelia Carmen GALATI ,  Natalia Maria Rita SPINELLA

IPC: C12Q1/686 ,  C12Q1/6816 ,  C12Q1/6844 ,  C12Q1/6851 ,  B01L7/00 ,  C12Q1/6825

Abstract: A method for real-time quantitative detection of single-type, target nucleic acid sequences amplified using a PCR in a microwell, comprising introducing in the microwell a sample comprising target nucleic acid sequences, magnetic primers, and labelling probes; performing an amplification cycle to form labelled amplicons; attracting the magnetic primers to a surface through a magnetic field to form a layer including labelled amplification products and free magnetic primers; and detecting the labelled amplification products in the layer with a surface-specific reading method.

公开(公告)号：US20210036104A1

公开(公告)日：2021-02-04

申请号：US16945220

申请日：2020-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello SANTANGELO ,  Giuseppe LONGO ,  Lucio RENNA

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US20190319159A1

公开(公告)日：2019-10-17

申请号：US16386170

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Giovanni CONDORELLI ,  Lucio RENNA

IPC: H01L31/14 ,  H01L27/144 ,  H01L31/024 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18 ,  G01J1/44

Abstract: A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.