公开(公告)号：US20240429273A1

公开(公告)日：2024-12-26

申请号：US18825974

申请日：2024-09-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Antonello SANTANGELO ,  Giuseppe LONGO ,  Lucio RENNA

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US20210215600A1

公开(公告)日：2021-07-15

申请号：US17217662

申请日：2021-03-30

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Maria Eloisa CASTAGNA ,  Salvatore CASCINO ,  Viviana CERANTONIO ,  Antonello SANTANGELO

IPC: G01N21/3504

Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.

公开(公告)号：US20170301548A1

公开(公告)日：2017-10-19

申请号：US15640203

申请日：2017-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra ALBERTI ,  Paolo BADALA' ,  Antonello SANTANGELO

IPC: H01L21/285 ,  H01L23/00 ,  H01L23/482

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

公开(公告)号：US20180100825A1

公开(公告)日：2018-04-12

申请号：US15836587

申请日：2017-12-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Salvatore CASCINO ,  Roberto MODICA ,  Viviana CERANTONIO ,  Maurizio MOSCHETTI

IPC: G01N27/22

CPC classification number: G01N27/225 ,  G01N27/22 ,  G01N27/223 ,  G01N27/227

Abstract: A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.

公开(公告)号：US20160087082A1

公开(公告)日：2016-03-24

申请号：US14954635

申请日：2015-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore CASCINO ,  Leonardo GERVASI ,  Antonello SANTANGELO

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

公开(公告)号：US20150219582A1

公开(公告)日：2015-08-06

申请号：US14611062

申请日：2015-01-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Salvatore CASCINO ,  Roberto MODICA ,  Viviana CERANTONIO ,  Maurizio MOSCHETTI

IPC: G01N27/22 ,  C23C14/34

CPC classification number: G01N27/225 ,  G01N27/22 ,  G01N27/223 ,  G01N27/227

Abstract: A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.

Abstract translation: 一种挥发性物质的传感器，包括：敏感层，敏感材料，其可渗透挥发性物质，并且具有取决于所吸收挥发性物质浓度的介电常数; 第一电极结构和第二电极结构，电容耦合在一起并且布置成使得第一电极结构和第二电极结构之间的电容受到敏感材料的电介电常数的影响; 以及供给装置，被配置为在第一操作条件下，通过第一电极结构和第二电极结构之间的加热电流供应加热电流，以加热敏感层。

公开(公告)号：US20210333195A1

公开(公告)日：2021-10-28

申请号：US17367160

申请日：2021-07-02

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Antonello SANTANGELO ,  Salvatore CASCINO ,  Viviana CERANTONIO

IPC: G01N15/14

Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.

公开(公告)号：US20210104626A1

公开(公告)日：2021-04-08

申请号：US17017565

申请日：2020-09-10

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Alessandro Paolo BRAMANTI ,  Alberto PAGANI ,  Antonello SANTANGELO

IPC: H01L29/78 ,  H01L43/06 ,  H01L29/417 ,  H01L49/02 ,  H01L43/14 ,  H03K17/687 ,  G01R33/07

Abstract: Various embodiments of the present disclosure provide a power device including at least one first conductive element adapted to generate a magnetic field when traversed by a current, and characterised in that it further comprises a Hall sensor electrically insulated from the first conductive element. The sensor and the first conductive element are mutually arranged so as to detect said magnetic field indicative of the current that traverses the first conductive element.

公开(公告)号：US20210036104A1

公开(公告)日：2021-02-04

申请号：US16945220

申请日：2020-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello SANTANGELO ,  Giuseppe LONGO ,  Lucio RENNA

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US20190305159A1

公开(公告)日：2019-10-03

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Massimo Cataldo MAZZILLO ,  Salvatore CASCINO ,  Giuseppe LONGO ,  Antonella SCIUTO

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18 ,  H01L31/0216

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.