公开(公告)号：US20180122470A1

公开(公告)日：2018-05-03

申请号：US15598962

申请日：2017-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Fabio Enrico Carlo Disegni ,  Maurizio Francesco Perroni ,  Cesare Torti ,  Mauro Maggiolini

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/004 ,  G11C13/0097 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2213/79 ,  G11C2213/82

Abstract: A non-volatile memory includes a number of bit lines, a number of source lines, and a number of memory cells of a non-volatile type. Each memory cell is coupled between a respective bit line and a respective source line. One or more discharge lines are coupled to a reference-voltage terminal. A number of controlled switches are coupled between a respective source line and a respective discharge line, which can be selectively driven for connecting the respective source line to the respective discharge line so as to form a conductive path between the respective source line and the reference-voltage terminal.