公开(公告)号：US20040181643A1

公开(公告)日：2004-09-16

申请号：US10735250

申请日：2003-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Rino Micheloni ,  Roberto Ravasio

IPC: G06F013/00

CPC classification number: G11C7/1051 ,  G06F13/4243 ,  G11C7/04 ,  G11C7/1063 ,  G11C7/22 ,  G11C16/32

Abstract: A memory system comprising a semiconductor memory for storing digital data, said memory being connectable to a control device in order to receive an address signal and to make data selected through the output-available address signal. The system is characterised in that it comprises a generating circuit for activating a wait signal to be forwarded to the control device during reading operations in such a way as to indicate the non-availability of the data to be read. The generating circuit is such to deactivate the wait signal, in such a way as to indicate the availability of the data to be read, following a waiting time interval correlated with an effective access time for said memory.

Abstract translation: 一种存储器系统，包括用于存储数字数据的半导体存储器，所述存储器可连接到控制装置，以便接收地址信号并且通过输出可用地址信号选择数据。 该系统的特征在于，其包括用于在读取操作期间激活等待信号以发送到控制设备的发生电路，以便指示要读取的数据的不可用性。 发生电路是这样的，以等待信号去激活，以便在与所述存储器的有效访问时间相关的等待时间间隔之后，指示待读取的数据的可用性。

公开(公告)号：US20040170061A1

公开(公告)日：2004-09-02

申请号：US10729829

申请日：2003-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Rino Micheloni ,  Roberto Ravasio

IPC: G11C011/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3454

Abstract: A device and method for programming an electrically programmable memory applies at least one first programming pulse to a group of memory cells (MC1-MCk) of the memory, accesses the memory cells of the group to ascertain a programming state thereof, and applies at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.

Abstract translation: 用于对电可编程存储器进行编程的装置和方法将至少一个第一编程脉冲施加到存储器的一组存储器单元（MC1-MCK），访问该组的存储单元以确定其编程状态，并且至少应用 对于编程状态未被确定以对应于期望的编程状态的组中的那些存储器单元的一秒编程脉冲。 根据在所述至少一个第一编程脉冲和所述至少一个第二编程脉冲之间的所述组中的存储器单元的偏置条件的预测变化，施加到所述存储器单元的控制电极的电压在所述至少一个第一编程脉冲和所述至少一个第二编程脉冲之间变化 和至少一个第二编程脉冲。 因此避免了对存储器单元的不期望​​的过度编程。

公开(公告)号：US20040170057A1

公开(公告)日：2004-09-02

申请号：US10748696

申请日：2003-12-30

Applicant: STMicroelectronics S.r.l.

Inventor： Osama Khouri ,  Roberto Ravasio ,  Rino Micheloni ,  Giovanni Campardo

IPC: G11C011/34

CPC classification number: G11C29/76

Abstract: The device includes a circuit for sector remapping having a CAM (Content Addressable Memory) unit, associated to and in data communication with a multiplexer unit. The CAM unit detects that a sector is defective, it provides the pre-programmed address of a replacing sector and it activates the multiplexer which performs the replacement. The defective sectors and the corresponding locations of the address map are therefore advantageously positioned to the rear to the addressing area. The addressing area is consequently continuous, thus allowing the information to be easily stored and retrieved.

Abstract translation: 该设备包括用于扇区重新映射的电路，其具有与多路复用器单元相关联并且与多路复用器单元进行数据通信的CAM（内容可寻址存储器）单元。 CAM单元检测到扇区有故障，它提供替换扇区的预编程地址，并激活执行替换的多路复用器。 因此，有缺陷的扇区和地址图的相应位置有利地位于寻址区的后方。 因此，寻址区域是连续的，从而可以容易地存储和检索信息。

公开(公告)号：US20040145947A1

公开(公告)日：2004-07-29

申请号：US10706306

申请日：2003-11-12

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Rino Micheloni ,  Roberto Ravasio

IPC: G11C016/04

CPC classification number: G11C16/10 ,  G11C16/30

Abstract: A circuit (115,145,150), for programming a non-volatile memory device (100) having a plurality of memory cells (105), includes a plurality of driving elements (115) each one for applying a program pulse to a selected memory cell to be programmed. The driving elements are suitable to be supplied by a power supply unit (120,125), and a control means (145,150) controls the driving elements (115). The control means (145,150) includes means (150,205) for determining a residual capacity of the power supply unit, and a selecting means (145) selectively enables the driving elements (115) according to the residual capacity. A method of programming, an integrated circuit, and a computer system are also disclosed.

Abstract translation: 用于对具有多个存储单元（105）的非易失性存储器件（100）进行编程的电路（115,145,150）包括多个驱动元件（115），每个驱动元件用于向所选存储器单元施加编程脉冲， 程序。 驱动元件适于由电源单元（120,125）供电，并且控制装置（145,150）控制驱动元件（115）。 控制装置（145,150）包括用于确定电源单元的剩余容量的装置（150,205），以及选择装置（145）根据剩余容量有选择地启用驱动元件（115）。 还公开了编程方法，集成电路和计算机系统。