Abstract:
A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
Abstract:
An integrated gyroscope, including an acceleration sensor formed by: a driving assembly; a sensitive mass extending in at least one first and second directions and being moved by the driving assembly in the first direction; and by a capacitive sensing electrode, facing the sensitive mass. The acceleration sensor has an rotation axis parallel to the second direction, and the sensitive mass is sensitive to forces acting in a third direction perpendicular to the other directions. The capacitive sensing electrode is formed by a conductive material region extending underneath the sensitive mass and spaced therefrom by an air gap.