公开(公告)号：US09171864B2

公开(公告)日：2015-10-27

申请号：US14249199

申请日：2014-04-09

Applicant: Samsung Display Co., LTD.

Inventor： Xinxing Li ,  Do-Hyun Kim ,  Chan-Woo Yang ,  Jeong-Ju Park ,  Jun-Hyun Park ,  Xun Zhu

IPC: H01L21/84 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1259 ,  H01L27/1288

Abstract: A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.

Abstract translation: 显示基板包括栅极金属图案，其包括设置在基底基板上的栅极线和与栅极线电连接的栅电极，与栅极金属图案完全重叠的有源图案，并且包括氧化物半导体和数据金属图案， 所述有源图案包括数据线，与所述栅极线电连接的源电极和与所述源电极间隔开的漏电极。 有源图案具有重叠区域，其中有源图案与源电极和漏电极重叠，并且有源图案不与源电极和漏电极重叠的曝光区域。 重叠区域的厚度和曝光区域的厚度相同。

公开(公告)号：US10068923B2

公开(公告)日：2018-09-04

申请号：US15190919

申请日：2016-06-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hye-Young Park ,  Hye-Hyang Park ,  Hui-Won Yang ,  Eun-Young Lee ,  Joo-Hee Jeon ,  Su-Kyoung Yang ,  Chan-Woo Yang

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

公开(公告)号：US10790448B2

公开(公告)日：2020-09-29

申请号：US15689396

申请日：2017-08-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chan-Woo Yang ,  Seung-Bae Kang ,  Han-Su Kim ,  Bong-Won Lee

IPC: H05K1/00 ,  H01L51/00 ,  H01L51/52 ,  G06F3/041 ,  H01L51/56

Abstract: A flexible electrode for a display device may include a conductive structure including a lower conductive pattern disposed on a substrate and an upper conductive pattern disposed on the lower conductive pattern, and an electrode layer disposed on the substrate, the electrode layer being adjacent to the conductive structure. A width of a top surface of the lower conductive pattern may be less than a width of a bottom surface of the upper conductive pattern.

公开(公告)号：US09748283B2

公开(公告)日：2017-08-29

申请号：US14664232

申请日：2015-03-20

Applicant: Samsung Display Co., LTD.

Inventor： Su-Kyoung Yang ,  Sang-Won Shin ,  Hyun-Eok Shin ,  Chan-Woo Yang ,  Dong-Min Lee

IPC: H01L21/28 ,  H01L27/12 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/45 ,  C23C14/02 ,  C23C14/58 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01L27/1259 ,  C23C14/02 ,  C23C14/541 ,  C23C14/5806 ,  H01J37/34 ,  H01L21/28008 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742

Abstract: In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.