公开(公告)号：US09786222B2

公开(公告)日：2017-10-10

申请号：US14728844

申请日：2015-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Keun Lim ,  Hui-Won Yang ,  Chong-Chul Chai

IPC: G09G3/32 ,  G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2310/0251 ,  G09G2320/043

Abstract: A pixel circuit and an OLED display including the same are disclosed. The pixel circuit includes a driving transistor having a double gate structure, the driving transistor including a first gate electrode electrically connected to a first node, a second gate electrode electrically connected to a second node, a first electrode electrically connected to a first power supply voltage, and a second electrode electrically connected to the anode of the OLED. The pixel circuit also includes a switching transistor including a gate electrode configured to receive a scan signal, a first electrode configured to receive a data voltage, and a second electrode electrically connected to the first node. The pixel circuit further includes a storage capacitor and a compensation capacitor including a first electrode electrically connected to the second node and a second electrode electrically connected to the first electrode of the driving transistor.

公开(公告)号：US09214564B2

公开(公告)日：2015-12-15

申请号：US14096939

申请日：2013-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chaun-Gi Choi ,  Sun-Kwang Kim ,  Hui-Won Yang ,  Sang-Il Park

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01J1/62 ,  H01J63/04 ,  H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/7869 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733

Abstract: A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.

Abstract translation: 薄膜晶体管（TFT）包括设置在基板上的栅电极。 氧化物半导体层设置在栅电极上。 在氧化物半导体层上设置绝缘层。 绝缘层包括第一接触孔，其暴露与栅电极的第一端相对应的氧化物半导体层的第一部分，以及第二接触孔，其暴露与栅极的相对端对应的氧化物半导体层的第二部分 电极。 源电极设置在绝缘层上，并通过第一接触孔与氧化物半导体层的第一部分接触。 漏电极设置在绝缘层上，并通过第二接触孔与氧化物半导体层的第二部分接触。

公开(公告)号：US20150001484A1

公开(公告)日：2015-01-01

申请号：US14096939

申请日：2013-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： CHAUN-GI CHOI ,  Sun-Kwang Kim ,  Hui-Won Yang ,  Sang-Il Park

IPC: H01L29/786 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733

Abstract: A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.

Abstract translation: 薄膜晶体管（TFT）包括设置在基板上的栅电极。 氧化物半导体层设置在栅电极上。 绝缘层设置在氧化物半导体层上。 绝缘层包括第一接触孔，其暴露与栅电极的第一端相对应的氧化物半导体层的第一部分，以及第二接触孔，其暴露与栅极的相对端对应的氧化物半导体层的第二部分 电极。 源电极设置在绝缘层上，并通过第一接触孔与氧化物半导体层的第一部分接触。 漏电极设置在绝缘层上，并通过第二接触孔与氧化物半导体层的第二部分接触。

公开(公告)号：US20140312320A1

公开(公告)日：2014-10-23

申请号：US14034291

申请日：2013-09-23

Applicant: Samsung Display Co., LTD.

Inventor： Hui-Won Yang ,  Chaun-Gi Choi

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/66969

Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Abstract translation: 制造薄膜晶体管的方法包括：在衬底上形成包括第一区域和第二区域的氧化物半导体图案; 在所述基板上形成绝缘膜以覆盖所述氧化物半导体图案; 通过图案去除第二区域上的绝缘膜; 通过退火处理来增加氧化物半导体图案的第一区域的载流子密度; 在所述绝缘膜上形成栅电极，使得所述栅电极与所述氧化物半导体图案绝缘并且与所述第二区域重叠; 以及形成与栅电极绝缘的源电极和漏极，并与第一区接触。

公开(公告)号：US12185618B2

公开(公告)日：2024-12-31

申请号：US17485729

申请日：2021-09-27

Applicant: Samsung Display Co., Ltd.

Inventor： Kyumin Kim ,  Jeehoon Kim ,  Hui-Won Yang ,  Yu-Jin Kim

IPC: H01L51/56 ,  H10K59/131 ,  H10K59/88 ,  H10K71/00 ,  H10K71/70

Abstract: A display device includes: an array of pixels disposed on a display area; a connection pad disposed on a pad area; a transmission line electrically coupled with the connection pad; and a conductive dummy pattern disposed under the transmission line. A part of the conductive dummy pattern overlaps the transmission line in a plan view. The transmission line transmits a driving signal or a power signal to the array of pixels. The connection pad includes a pad conductive layer electrically coupled with the transmission line, and a passivation layer disposed on the pad conductive layer. The passivation layer covers at least a side surface of the pad conductive layer and defines an opening overlapping the conductive dummy pattern and the transmission line in the plan view.

公开(公告)号：US11587975B2

公开(公告)日：2023-02-21

申请号：US16998470

申请日：2020-08-20

Applicant: Samsung Display Co., LTD.

Inventor： Jee Hoon Kim ,  Jae Seol Cho ,  Jong Moo Huh ,  Sung Jae Moon ,  Hui-Won Yang ,  Kang Moon Jo

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/58 ,  H01L33/62

Abstract: A display device includes a substrate; a semiconductor layer disposed on the substrate; a gate insulating film disposed on the semiconductor layer; a gate layer disposed on the gate insulating film and insulated from the semiconductor layer; an insulating film disposed on the semiconductor layer and the gate layer; and a metal layer disposed on the insulating film, wherein the semiconductor layer and the gate layer are electrically connected through the metal layer, and the semiconductor layer overlaps the gate layer in a plan view.

公开(公告)号：US09373669B2

公开(公告)日：2016-06-21

申请号：US14815327

申请日：2015-07-31

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jang-Soon Im

IPC: H01L21/00 ,  H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract translation: 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

公开(公告)号：US20160042694A1

公开(公告)日：2016-02-11

申请号：US14728844

申请日：2015-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Keun Lim ,  Hui-Won Yang ,  Chong-Chui Chai

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2310/0251 ,  G09G2320/043

Abstract: A pixel circuit and an OLED display including the same are disclosed. The pixel circuit includes a driving transistor having a double gate structure, the driving transistor including a first gate electrode electrically connected to a first node, a second gate electrode electrically connected to a second node, a first electrode electrically connected to a first power supply voltage, and a second electrode electrically connected to the anode of the OLED. The pixel circuit also includes a switching transistor including a gate electrode configured to receive a scan signal, a first electrode configured to receive a data voltage, and a second electrode electrically connected to the first node. The pixel circuit further includes a storage capacitor and a compensation capacitor including a first electrode electrically connected to the second node and a second electrode electrically connected to the first electrode of the driving transistor.

Abstract translation: 公开了包括其的像素电路和OLED显示器。 像素电路包括具有双栅极结构的驱动晶体管，驱动晶体管包括与第一节点电连接的第一栅电极，与第二节点电连接的第二栅电极，电连接到第一电源电压的第一电极 以及与OLED的阳极电连接的第二电极。 像素电路还包括开关晶体管，其包括被配置为接收扫描信号的栅电极，被配置为接收数据电压的第一电极和与第一节点电连接的第二电极。 像素电路还包括存储电容器和包括电连接到第二节点的第一电极和电连接到驱动晶体管的第一电极的第二电极的补偿电容器。

公开(公告)号：US11716886B2

公开(公告)日：2023-08-01

申请号：US17410274

申请日：2021-08-24

Applicant: Samsung Display Co., Ltd.

Inventor： Hui-Won Yang ,  Kyumin Kim ,  Jaeseol Cho ,  Jongmoo Huh

IPC: H10K59/131 ,  H10K59/121 ,  H01L27/12

CPC classification number: H10K59/131 ,  H10K59/1213 ,  H01L27/1225

Abstract: A display device includes a lower electrode extending in a first direction and a first active layer disposed on the lower electrode and extending in a second direction perpendicular to the first direction. The first active layer includes a first area having a first width in the first direction, a second area having a second width wider than the first width in the first direction, and overlapping the lower electrode and a third area between the first area and the second area and connecting the first area to the second area.

公开(公告)号：US10418431B2

公开(公告)日：2019-09-17

申请号：US15416653

申请日：2017-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.