THIN FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN FILM USING THE SAME
    2.
    发明申请
    THIN FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN FILM USING THE SAME 审中-公开
    薄膜沉积装置和使用其沉积薄膜的方法

    公开(公告)号:US20140034483A1

    公开(公告)日:2014-02-06

    申请号:US13795342

    申请日:2013-03-12

    Inventor: You Jong LEE

    Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.

    Abstract translation: 薄膜沉积设备包括包括反应空间的处理室,等离子体产生单元和溅射单元。 等离子体生成单元在反应空间中产生等离子体。 溅射单元独立地从等离子体发生单元驱动,以在反应空间中形成电场,并使用等离子体对靶进行溅射处理。

    SPUTTERING APPARATUS AND METHOD FOR THIN FILM ELECTRODE DEPOSITION

    公开(公告)号:US20250029819A1

    公开(公告)日:2025-01-23

    申请号:US18910046

    申请日:2024-10-09

    Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

    SPUTTERING APPARATUS AND METHOD FOR THIN FILM ELECTRODE DEPOSITION

    公开(公告)号:US20230085216A1

    公开(公告)日:2023-03-16

    申请号:US17687961

    申请日:2022-03-07

    Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

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