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    Apparatus for processing work piece by pulsed electric discharges in solid-gas plasma
    2.
    发明授权
    Apparatus for processing work piece by pulsed electric discharges in solid-gas plasma 有权

    公开(公告)号：US09941102B2

    公开(公告)日：2018-04-10

    申请号：US13608537

    申请日：2012-09-10

    申请人： Vladimir Kouznetsov

    发明人： Vladimir Kouznetsov

    IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32

    CPC分类号： H01J37/3444 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/351 ,  H01J37/32697 ,  H01J37/3405

    摘要： Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A pulsed current comprising biasing pulses arises between the second electrodes. Biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges.

    Apparatus and method for pretreating and coating bodies
    3.
    发明授权
    Apparatus and method for pretreating and coating bodies 有权

    公开(公告)号：US09812299B2

    公开(公告)日：2017-11-07

    申请号：US12989882

    申请日：2009-04-28

    申请人： Rainer Cremer ,  Walter May

    发明人： Rainer Cremer ,  Walter May

    IPC分类号： C23C14/14 ,  H01J37/34 ,  C23C14/35

    CPC分类号： H01J37/3408 ,  C23C14/14 ,  C23C14/352 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3473

    摘要： The invention relates to an apparatus and a method for pretreating and coating bodies by means of magnetron sputtering. In a vacuum chamber having a metallic chamber wall (26), magnetrons with sputter targets are arranged, at least one of which is an HPPMS magnetron to which electric pulses are fed by connecting a capacitive element (6) with the sputter target of the HPPMS magnetron via a switching element (5). To achieve effective pretreatment and coating of substrates it is provided according to a first aspect to arrange the switching element on the chamber wall. According to a second aspect, an electrode pair is provided, wherein a first electrode is an HPPMS magnetron (1) and the first and second electrodes are arranged in such a manner that a body (11) supported on a substrate table (4) is arranged between the active surfaces of the electrode pair or is moved through the space between the active surfaces of the electrode pair. In a third aspect, a method is provided, wherein, in an etch step, a negative bias voltage is applied to the body and the body is etched by means of metal ion bombardment, and subsequently the bias voltage is continuously lowered so that material sputtered-off from the sputter targets results in a layer build-up on the body.

    SPUTTER UNIT
    6.
    发明申请
    SPUTTER UNIT 审中-公开
    飞溅单元

    公开(公告)号：US20160326632A1

    公开(公告)日：2016-11-10

    申请号：US15147926

    申请日：2016-05-06

    申请人： safematic GmbH

    发明人： Walter COLLEONI ,  Patrick CAPEDER ,  Christof GRAF

    IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

    CPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/347 ,  H01J37/3476 ,  H01J37/3488

    摘要： A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.

    摘要翻译： 引入溅射单元，包括壳体，气体入口，用于将溅射单元可移除地连接到真空室的接口，布置成用于将经由气体入口接收的处理气体供应到真空室的气体出口，用于可移除连接的界面 所述溅射单元到包括用于在所述真空室中产生真空的真空泵的基本单元，以及布置在所述壳体中的变压器，用于将电源电压增加到电离电压，用于将经由所述气体出口供给的处理气体电离到所述真空室 。

    Assembly for feeding in HF current for tubular cathodes
    7.
    发明授权
    Assembly for feeding in HF current for tubular cathodes 有权
    用于馈送管状阴极的HF电流的组件

    公开(公告)号：US09437403B2

    公开(公告)日：2016-09-06

    申请号：US14357285

    申请日：2012-11-09

    申请人： FHR ANLAGENBAU GMBH

    发明人： Olaf Gawer ,  Sascha Kreher

    IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  H01J37/34

    CPC分类号： H01J37/3411 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3444

    摘要： An arrangement is provided for feeding in HF current for rotatable tubular cathodes in a vacuum chamber of a plasma coating system as well as a high frequency current source. Located inside the tubular cathode is a magnet arrangement that extends along said tubular cathode for generating a magnetic field. The arrangement enables a low loss infeed of HF current, so that a particularly homogeneous sputter removal from the tubular cathode is guaranteed. The HF current source is coupled to the tubular cathode inside the vacuum chamber by a capacitive infeed of HF current in the form of a coupling capacitor. The coupling capacitor includes a part of the surface of the tubular cathode and a metal plate or metal film that surrounds the tubular cathode, at least partially, at a specified distance.

    摘要翻译： 提供了用于在等离子体涂覆系统的真空室中的可旋转管状阴极以及高频电流源中馈送HF电流的装置。 位于管状阴极内的是沿着所述管状阴极延伸以产生磁场的磁体布置。 该布置能够实现HF电流的低损耗进给，从而保证从管状阴极的特别均匀的溅射去除。 HF电流源通过耦合电容器形式的HF电流的电容性进料耦合到真空室内的管状阴极。 耦合电容器包括管状阴极的表面的一部分和至少部分地以特定距离围绕管状阴极的金属板或金属膜。

    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS
    8.
    发明申请
    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS 审中-公开
    溅射沉积室中逆向电压有限波形的调制

    公开(公告)号：US20160215386A1

    公开(公告)日：2016-07-28

    申请号：US14917511

    申请日：2014-09-09

    申请人： ITN ENERGY SYSTEMS, INC.

    发明人： Michael Wayne Stowell

    IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/34

    CPC分类号： C23C14/542 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/54 ,  H01J37/32146 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3476

    摘要： Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality.

    摘要翻译： 施加到溅射沉积室的阴极的波形的调制调节溅射沉积室中的溅射速率，离子的密度和动能。 波形可以包括具有叠加在脉冲DC波形上的调制AC信号的脉冲DC波形。 DC波形可能具有反向电压周期。 提供反向电压限制电路，以便将反向电压尖峰限制到所选择的反向电压阈值。 可以调制波形的各种性质来提高或降低溅射速率和薄膜质量。

    ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK
    10.
    发明申请
    ADJUSTABLE NON-DISSIPATIVE VOLTAGE BOOSTING SNUBBER NETWORK 有权
    可调节的非放电电压升压SNUBBER网络

    公开(公告)号：US20160139617A1

    公开(公告)日：2016-05-19

    申请号：US14945324

    申请日：2015-11-18

    申请人： Advanced Energy Industries, Inc.

    发明人： Kenneth W. Finley

    IPC分类号： G05F1/46 ,  H05H1/46 ,  H02H9/04

    CPC分类号： G05F1/46 ,  H01J37/3405 ,  H01J37/3444 ,  H02H3/087 ,  H02H9/042 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4682

    摘要： This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

    摘要翻译： 本公开描述了一种非耗散缓冲电路，其被配置为在负载的阻抗快速上升之后升高施加到负载的电压。 因此，由于负载阻抗上升而导致负载的功率递减降低后，电压提升可以引起更快速的电流斜坡。 特别地，缓冲器可以包括单向开关，电压倍增器和限流器的组合。 在某些情况下，这些组件可分别是二极管，倍压器和电感。