Organic light-emitting display device and method of manufacturing the same
    1.
    发明授权
    Organic light-emitting display device and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US09373669B2

    公开(公告)日:2016-06-21

    申请号:US14815327

    申请日:2015-07-31

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    Organic light-emitting display device
    2.
    发明授权
    Organic light-emitting display device 有权
    有机发光显示装置

    公开(公告)号:US09105862B2

    公开(公告)日:2015-08-11

    申请号:US14010164

    申请日:2013-08-26

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    TRANSPARENT THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    TRANSPARENT THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME 审中-公开
    透明薄膜晶体管及其制造方法

    公开(公告)号:US20140145188A1

    公开(公告)日:2014-05-29

    申请号:US14168967

    申请日:2014-01-30

    CPC classification number: H01L27/127 H01L27/1218 H01L27/1225 H01L29/7869

    Abstract: A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

    Abstract translation: 薄膜晶体管(TFT)及其制造方法可以在半导体层和源电极之间或半导体层与漏电极之间形成欧姆接触,其中TFT可以应用于塑料基板 。 TFT包括:基板; 在衬底上由ZnO,InZnO,ZnSnO和/或ZnInGaO形成的有源层,包括沟道区,源极区和漏极区; 与有源层绝缘的栅电极; 以及与栅电极绝缘并分别电连接到源极区和漏极区的源极和漏极,其中有源层的源极区和漏极区包括氢。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    4.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管,其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号:US08659016B2

    公开(公告)日:2014-02-25

    申请号:US13889752

    申请日:2013-05-08

    CPC classification number: H01L29/7869 H01L29/78606

    Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    Abstract translation: 使用氧化物半导体作为有源层的薄膜晶体管(TFT),TFT的制造方法以及具有TFT的平板显示装置包括:形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中,界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性,因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙,所以物理地防止了电荷俘获。

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