ANNEALING APPARATUS
    2.
    发明申请
    ANNEALING APPARATUS 审中-公开

    公开(公告)号:US20200051835A1

    公开(公告)日:2020-02-13

    申请号:US16535021

    申请日:2019-08-07

    Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20240237438A1

    公开(公告)日:2024-07-11

    申请号:US18430632

    申请日:2024-02-01

    CPC classification number: H10K59/131 H10K59/121 H10K59/1201

    Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240268151A1

    公开(公告)日:2024-08-08

    申请号:US18515270

    申请日:2023-11-21

    CPC classification number: H10K59/1213 H10K59/1201

    Abstract: A display device includes a light-emitting device; a first transistor that outputs a driving current applied to the light-emitting device; a second transistor that transmits a data voltage to a first electrode of the first transistor; and a third transistor electrically connected to a second electrode and a gate electrode of the first transistor, a first semiconductor layer of the first transistor includes fluorine ions, a third semiconductor layer of the third transistor includes a third lower doping layer and a third upper doping layer sequentially disposed, a concentration of phosphorus ions of the third lower doping layer is greater than a concentration of phosphorus ions of the third upper doping layer, and a concentration of boron ions of the third upper doping layer is greater than a concentration of boron ions of the third lower doping layer.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220173196A1

    公开(公告)日:2022-06-02

    申请号:US17307906

    申请日:2021-05-04

    Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220077261A1

    公开(公告)日:2022-03-10

    申请号:US17338738

    申请日:2021-06-04

    Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

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