MANUFACTURING METHOD OF THIN FILM TRANSISTOR DISPLAY PANEL
    2.
    发明申请
    MANUFACTURING METHOD OF THIN FILM TRANSISTOR DISPLAY PANEL 有权
    薄膜晶体管显示面板的制造方法

    公开(公告)号:US20160197165A1

    公开(公告)日:2016-07-07

    申请号:US14795578

    申请日:2015-07-09

    Abstract: Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate; formation of sequentially a gate insulating layer, an active layer, a data metal layer, and a photoresist etching mask pattern on the gate line; etching the data metal layer with the same shape as the photoresist etching mask pattern; etching the active layer by using the photoresist etching mask pattern; formation of a data line including a source electrode and a drain electrode for completing a channel region on the active layer; and formation of a pixel electrode exposing the drain electrode and electrically connected with the drain electrode, in which in the etching of the active layer, a dry-etch process is performed by using gas including at least one of NF3 and H2.

    Abstract translation: 提供一种薄膜晶体管阵列面板的制造方法,包括:在基板上形成包括栅电极的栅极线; 在栅极线上依次形成栅极绝缘层,有源层,数据金属层和光致抗蚀剂蚀刻掩模图案; 以与光致抗蚀剂蚀刻掩模图案相同的形状蚀刻数据金属层; 通过使用光致抗蚀剂蚀刻掩模图案蚀刻有源层; 形成包括用于完成有源层上的沟道区的源电极和漏电极的数据线; 以及形成暴露漏电极并与漏电极电连接的像素电极,其中在有源层的蚀刻中,通过使用包括NF 3和H 2中的至少一个的气体进行干蚀刻工艺。

    ANNEALING APPARATUS
    5.
    发明申请
    ANNEALING APPARATUS 审中-公开

    公开(公告)号:US20200051835A1

    公开(公告)日:2020-02-13

    申请号:US16535021

    申请日:2019-08-07

    Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

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