公开(公告)号：US20190051520A1

公开(公告)日：2019-02-14

申请号：US16103116

申请日：2018-08-14

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  In Kyo KIM ,  Keun Hee PARK ,  Suk Won JUNG

IPC: H01L21/02 ,  H01L23/522 ,  H01L21/28

Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

公开(公告)号：US20190115409A1

公开(公告)日：2019-04-18

申请号：US16132031

申请日：2018-09-14

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Soo HUH ,  Dong Kyun KO ,  Sung Chul KIM ,  Woo Jin KIM ,  Cheol Lae ROH ,  Keun Hee PARK

IPC: H01L27/32 ,  H01L21/02 ,  H01L49/02 ,  H01L51/52

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

公开(公告)号：US20190326122A1

公开(公告)日：2019-10-24

申请号：US16163629

申请日：2018-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  Myung Soo HUH ,  In Kyo KIM ,  Keun Hee PARK

IPC: H01L21/28 ,  H01L29/51 ,  C23C16/452 ,  C23C16/455 ,  C23C16/448

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

公开(公告)号：US20220246708A1

公开(公告)日：2022-08-04

申请号：US17725012

申请日：2022-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Soo HUH ,  Dong Kyun KO ,  Sung Chul KIM ,  Woo Jin KIM ,  Cheol Lae ROH ,  Keun Hee PARK

IPC: H01L27/32 ,  H01L21/02 ,  H01L49/02 ,  H01L51/52 ,  H01L27/12

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.