公开(公告)号：US20150259798A1

公开(公告)日：2015-09-17

申请号：US14444231

申请日：2014-07-28

Applicant: Samsung Display Co. Ltd.

Inventor： Choel Min JANG ,  In Kyo KIM ,  Suk Won JUNG ,  Myung Soo HUH

IPC: C23C16/455

CPC classification number: C23C16/45546 ,  C23C16/45502 ,  C23C16/45527 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/545

Abstract: An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.

Abstract translation: 原子层沉积装置包括：第一基板，其上限定有用于使基板安置的座部的第一基板;与第一基板相对设置的第二基板;布置在第二基板上的第一气体喷嘴部; 第二气体喷嘴部分，布置在第二基板上以与第一气体喷嘴部分间隔开并且基本上平行于第一气体喷嘴部分;以及气体存储部分，连接到第一气体喷嘴部分和第二气体喷嘴部分。

公开(公告)号：US20190051520A1

公开(公告)日：2019-02-14

申请号：US16103116

申请日：2018-08-14

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  In Kyo KIM ,  Keun Hee PARK ,  Suk Won JUNG

IPC: H01L21/02 ,  H01L23/522 ,  H01L21/28

Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

公开(公告)号：US20160138157A1

公开(公告)日：2016-05-19

申请号：US14702985

申请日：2015-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Choel Min JANG ,  Myung Soo HUH ,  Nam HA ,  Dong Kyun KO ,  In Kyo KIM

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/44

CPC classification number: C23C16/4412 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/54

Abstract: A thin film deposition apparatus, including a plurality of linear nozzle parts separated from each other; and an exhaust plate to which is attached the plurality of linear nozzle parts, each linear nozzle part including a linear body member; a pair of first reaction gas pipes in the linear body member and inflowing a first reaction gas; a second reaction gas pipe between the pair of first reaction gas pipes and inflowing a second reaction gas; and a pair of control gas pipes between each of the first reaction gas pipes and the second reaction gas pipe and inflowing a control gas controlling a flow of the second reaction gas.

Abstract translation: 一种薄膜沉积设备，包括彼此分离的多个线性喷嘴部件; 以及排气板，多个直线喷嘴部附接有排气板，每个直线喷嘴部分包括线状体部件; 一对第一反应气体管道，并且流入第一反应气体; 在所述一对第一反应气体管之间的第二反应气体管道，并流入第二反应气体; 以及在所述第一反应气体管道和所述第二反应气体管道中的每一个之间的一对控制气体管道，并且输入控制所述第二反应气体的流动的控制气体。

公开(公告)号：US20190326122A1

公开(公告)日：2019-10-24

申请号：US16163629

申请日：2018-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  Myung Soo HUH ,  In Kyo KIM ,  Keun Hee PARK

IPC: H01L21/28 ,  H01L29/51 ,  C23C16/452 ,  C23C16/455 ,  C23C16/448

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.