公开(公告)号：US20190051520A1

公开(公告)日：2019-02-14

申请号：US16103116

申请日：2018-08-14

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  In Kyo KIM ,  Keun Hee PARK ,  Suk Won JUNG

IPC: H01L21/02 ,  H01L23/522 ,  H01L21/28

Abstract: A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

公开(公告)号：US20190326122A1

公开(公告)日：2019-10-24

申请号：US16163629

申请日：2018-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Kyun KO ,  Woo Jin KIM ,  Myung Soo HUH ,  In Kyo KIM ,  Keun Hee PARK

IPC: H01L21/28 ,  H01L29/51 ,  C23C16/452 ,  C23C16/455 ,  C23C16/448

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

公开(公告)号：US20190115409A1

公开(公告)日：2019-04-18

申请号：US16132031

申请日：2018-09-14

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Soo HUH ,  Dong Kyun KO ,  Sung Chul KIM ,  Woo Jin KIM ,  Cheol Lae ROH ,  Keun Hee PARK

IPC: H01L27/32 ,  H01L21/02 ,  H01L49/02 ,  H01L51/52

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

公开(公告)号：US20220246708A1

公开(公告)日：2022-08-04

申请号：US17725012

申请日：2022-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Soo HUH ,  Dong Kyun KO ,  Sung Chul KIM ,  Woo Jin KIM ,  Cheol Lae ROH ,  Keun Hee PARK

IPC: H01L27/32 ,  H01L21/02 ,  H01L49/02 ,  H01L51/52 ,  H01L27/12

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

公开(公告)号：US20190390342A1

公开(公告)日：2019-12-26

申请号：US16434256

申请日：2019-06-07

Applicant: SAMSUNG DISPLAY CO .. LTD.

Inventor： WOO JIN KIM ,  Dong Kyun KO ,  Keun Hee PARK ,  Myung Soo HUH ,  Seon Uk PARK

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/40

Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first pate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction, The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.