公开(公告)号：US10274571B2

公开(公告)日：2019-04-30

申请号：US15478226

申请日：2017-04-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Robert Beach ,  Dmytro Apalkov ,  Volodymyr Voznyuk ,  Ilya Krivorotov ,  Chengcen Sha

IPC: G01R33/60 ,  H01L27/22 ,  H01L43/08 ,  G11C11/02 ,  H01L43/12 ,  G01N24/10 ,  G11C29/02 ,  G11C29/24 ,  G11C29/50 ,  G11C11/16

Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.

公开(公告)号：US20180205001A1

公开(公告)日：2018-07-19

申请号：US15478226

申请日：2017-04-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Robert Beach ,  Dmytro Apalkov ,  Volodymyr Voznyuk ,  Ilya Krivorotov ,  Chengcen Sha

IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G01R33/60

CPC classification number: G01R33/60 ,  G01N24/10 ,  G11C11/02 ,  G11C11/1675 ,  G11C29/021 ,  G11C29/028 ,  G11C29/24 ,  G11C29/50008 ,  G11C2029/5006 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A method and apparatus determine an exchange stiffness of a free layer residing in a magnetic junction. The method includes performing spin torque ferromagnetic resonance (ST-FMR) measurements for the magnetic junction. The ST-FMR measurements indicate characteristic frequencies corresponding to spin wave modes in the free layer. The method also includes calculating the exchange stiffness of the free layer based upon the plurality of characteristic frequencies. In some embodiments, the magnetic junction resides on a wafer including other magnetic junctions for a device. The magnetic junctions may be arranged as a magnetic memory. The magnetic junction undergoing ST-FMR has a different aspect ratio than the magnetic junctions.