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1.发明授权Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements 有权通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统公开(公告)号：US09412787B2
公开(公告)日：2016-08-09
申请号：US14176310
申请日：2014-02-10
Applicant: Samsung Electronics Co., LTD.
Inventor： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC: H01L27/22 , B82Y25/00 , B82Y40/00 , G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , H01F41/34
CPC classification number: H01L27/224 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy. The free layer is switchable between magnetic states when a write current is passed through the magnetic element. The free layer includes ferromagnetic layers interleaved with capping layer(s) such that a ferromagnetic layer resides at an edge of the free layer. The capping layer(s) are configured such that the ferromagnetic layers are ferromagnetically coupled.
Abstract translation: 描述了利用磁性元件的磁性元件和磁性存储器。 触点电耦合到磁性元件。 磁性元件包括固定的，非磁性的间隔物，以及与自由层和触点相邻的自由层和垂直的覆盖层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 垂直覆盖层引起至少部分垂直磁各向异性。 当写入电流通过磁性元件时，自由层可以在磁状态之间切换。 自由层包括与封盖层交错的铁磁层，使得铁磁层位于自由层的边缘。 覆盖层被构造成使得铁磁层被铁磁耦合。
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2.发明申请METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆公开(公告)号：US20140151829A1
公开(公告)日：2014-06-05
申请号：US14176310
申请日：2014-02-10
Applicant: Samsung Electronics Co., LTD.
Inventor： Steven M. Watts , Zhitao Diao , Xueti Tang
CPC classification number: H01L27/224 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy. The free layer is switchable between magnetic states when a write current is passed through the magnetic element. The free layer includes ferromagnetic layers interleaved with capping layer(s) such that a ferromagnetic layer resides at an edge of the free layer. The capping layer(s) are configured such that the ferromagnetic layers are ferromagnetically coupled.
Abstract translation: 描述了利用磁性元件的磁性元件和磁性存储器。 触点电耦合到磁性元件。 磁性元件包括固定的，非磁性的间隔物，以及与自由层和触点相邻的自由层和垂直的覆盖层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 垂直覆盖层引起至少部分垂直磁各向异性。 当写入电流通过磁性元件时，自由层可以在磁状态之间切换。 自由层包括与封盖层交错的铁磁层，使得铁磁层位于自由层的边缘。 覆盖层被构造成使得铁磁层被铁磁耦合。
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