公开(公告)号：US20240266291A1

公开(公告)日：2024-08-08

申请号：US18479211

申请日：2023-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunyoung LEE ,  Wei GUO ,  Wulin HE ,  Buseo CHOI ,  Sanghyun PARK ,  Wonwoong CHUNG

IPC: H01L23/532 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53219 ,  H01L21/32051 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76834 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/5329

Abstract: A material including an alloy including aluminum of 99% by weight to 99.8% by weight, copper of 0.1% by weight to 0.5% by weight, and scandium of 0.1% by weight to 0.5% by weight, a metal line in a semiconductor device including the material, and a method for forming the metal line in the semiconductor device may be provided.

公开(公告)号：US20240194604A1

公开(公告)日：2024-06-13

申请号：US18357403

申请日：2023-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunyoung LEE ,  Wonwoong CHUNG ,  Buseo CHOI ,  Kkotchorong PARK ,  Seulgi BAE ,  Uisuk JUNG ,  Dong-Chan LIM

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53223 ,  H01L21/76864 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266

Abstract: The described technology relates generally to a material for a metal line in a semiconductor device including an alloy including aluminum as a main material, copper, and an element X, wherein the element X has 1) a coefficient of thermal expansion (CTE) of greater than about 0.55 ppm/K and less than about 5 ppm/K, 2) a melting point (MP) of greater than about 3000° C., and 3) electronegativity of greater than about 2.2, a metal line in a semiconductor device including the alloy, and a method of forming a metal line in a semiconductor device.