公开(公告)号：US20170194583A1

公开(公告)日：2017-07-06

申请号：US15168342

申请日：2016-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjun Yun ,  Joo Young KIM ,  Byong Gwon SONG ,  Jaewon JANG ,  Jiyoung JUNG ,  Ajeong CHOI

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0018 ,  H01L51/0074 ,  H01L51/0558

Abstract: A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

公开(公告)号：US20250146876A1

公开(公告)日：2025-05-08

申请号：US18614301

申请日：2024-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Taek SEO ,  Anton SOFRONOV ,  Se Yoon KIM ,  Byong Gwon SONG ,  Jang Woo YOU ,  Du Hyun LEE

IPC: G01J5/0806 ,  G01J5/08 ,  G01J5/20

Abstract: The present disclosure relates to a bolometer pixel and a bolometer array. The bolometer pixel includes: a substrate; an absorber configured to absorb incoming light in a predetermined wavelength range and having a central absorbent body that floats above the substrate by supports; and a reflector having a reflective layer provided on the substrate to reflect light incident on the substrate, and a pattern layer provided on the reflective layer to have lens power to concentrate the incident light onto the central absorbent body.

公开(公告)号：US20250138222A1

公开(公告)日：2025-05-01

申请号：US18638339

申请日：2024-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yoon KIM ,  Byong Gwon SONG ,  Du Hyun LEE ,  Won Taek SEO ,  Jang Woo YOU ,  Yong Seop YOON

IPC: G02B1/00 ,  H04N23/55

Abstract: A metalens includes a substrate, and a metasurface provided on the substrate and including a plurality of metaatoms, where at least one of the plurality of metaatoms may include a plurality of layers.

公开(公告)号：US20250081851A1

公开(公告)日：2025-03-06

申请号：US18531187

申请日：2023-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choong Ho RHEE ,  Jae Chul PARK ,  Byong Gwon SONG ,  Jang Woo YOU ,  Yong Seop YOON ,  Du Hyun LEE

IPC: H10N19/00

Abstract: A thermal image sensor and a method of manufacturing the same. The thermal image sensor includes: a substrate; a row electrode and a column electrode on the substrate; a multi-layer stack including an absorption layer and a temperature sensor; supporting arms that extend from diagonal corners of the multi-layer stack and that are spaced apart from both sides of the multi-layer stack, wherein the supporting arms have a concave-convex shape including a plurality of concave portions and a plurality of convex portions; and legs protruding from the row electrode and the column electrode, wherein the legs are connected to extended ends of the supporting arms to allow the multi-layer stack to float above the substrate.

公开(公告)号：US20220190266A1

公开(公告)日：2022-06-16

申请号：US17675387

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young KIM ,  Byong Gwon SONG ,  Jeong Il PARK ,  Jiyoung JUNG

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00 ,  H01L51/10 ,  H01L29/423

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

公开(公告)号：US20210013435A1

公开(公告)日：2021-01-14

申请号：US16747901

申请日：2020-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young KIM ,  Byong Gwon SONG ,  Jeong II PARK ,  Jiyoung JUNG

IPC: H01L51/05 ,  G02F1/1368 ,  H01L51/00 ,  H01L27/28

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.