公开(公告)号：US20220102405A1

公开(公告)日：2022-03-31

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Chang Kyu LEE ,  Dongmo IM ,  Ju-eun KIM ,  Miseon PARK ,  Jungim CHOE ,  Soojin HONG

IPC: H01L27/146

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US20250040282A1

公开(公告)日：2025-01-30

申请号：US18628099

申请日：2024-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihun LIM ,  Sungki MIN ,  Chang Kyu LEE ,  Yongkun JO

IPC: H01L27/146

Abstract: An image sensor includes a substrate region having a photoelectric conversion region and a floating diffusion region therein. The floating diffusion region is configured to receive charges generated in the photoelectric conversion region in response to light incident the photoelectric conversion region. First and second horizontal conductive lines are provided that extend on the substrate region, but at different heights relative to a surface of the substrate region. The first horizontal conductive line is electrically connected to the floating diffusion region and has a thickness smaller than a thickness of the second horizontal conductive line. In addition, the first horizontal conductive line extends closer to the substrate region than the second horizontal conductive line.

公开(公告)号：US20250040279A1

公开(公告)日：2025-01-30

申请号：US18589834

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Jongwoo HONG ,  Jonghyun GO ,  Haneul KIM ,  Chang Kyu LEE ,  Keun Yeong CHO ,  Joonhyuk HWANG

IPC: H01L27/146

Abstract: An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

公开(公告)号：US20230120066A1

公开(公告)日：2023-04-20

申请号：US17856140

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Chang Kyu LEE ,  In Sung JOE ,  Junhong KIM ,  Jinsun PYO

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a pixel isolation pattern in the substrate and defining unit pixel regions in the substrate, color filters on the substrate and corresponding to the unit pixel regions, respectively, a low-refractive index pattern between adjacent color filters of the color filters to at least partially isolate the adjacent color filters from direct contact with each other, an insulating structure between the substrate and the color filters, and a light blocking pattern vertically overlapping with the pixel isolation pattern. The light blocking pattern is within the insulating structure and is isolated from direct contact with the low-refractive index pattern.